Jpn. J. Appl. Phys. 45 (2006) pp. L1286-L1288  |Next Article|  |Table of Contents|
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Express Letter

Room-Temperature Stimulated Emission from AlN at 214 nm

Maxim Shatalov, Mikhail Gaevski, Vinod Adivarahan and Asif Khan

Department of Electrical Engineering, University of South Carolina, 301 S. Main Street, Columbia, South Carolina 29208, U.S.A

(Received November 7, 2006; accepted November 23, 2006; published online December 8, 2006)

We report the first ever room temperature (RT) stimulated emission at 214 nm using high quality AlN layers that were grown over patterned sapphire substrates by pulsed lateral epitaxial overgrowth (PLOG) process. The PLOG process yielded fully coalesced layers with total thicknesses in excess of 10 µm resulting in a reduction in the threading dislocation density by several orders. The stimulated emission was achieved at 214 nm under pulsed optical pumping at RT. The RT threshold optical power density was approximately 9 MW/cm2 and the stimulated edge-emission signal was strongly polarized with Ec.

URL: http://jjap.jsap.jp/link?JJAP/45/L1286/
DOI: 10.1143/JJAP.45.L1286
KEYWORDS:AlN, nitride, stimulated emission, lasing, polarization, MOCVD, lateral overgrowth


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