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Jpn. J. Appl. Phys. 45 (2006) pp. L187-L189  |Next Article|  |Table of Contents|
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Express Letter

Ferroelectricity Down to at Least 2 nm in Multiferroic BiFeO₃ Epitaxial Thin Films

H. Béa, S. Fusil, K. Bouzehouane, M. Bibes¹, M. Sirena, G. Herranz, E. Jacquet, J.-P. Contour and A. Barthélémy

Unité Mixte de Physique CNRS-Thales, Route Départementale 128, 91767 Palaiseau, France
¹Institut d'Electronique Fondamentale, Université Paris-Sud, 91405 Orsay, France

(Received December 24, 2005; accepted January 25, 2006; published online February 10, 2006)

We report here on the preservation of ferroelectricity down to 2 nm in BiFeO₃ ultrathin films. The electric polarization can be switched reversibly and is stable over several days. Our findings bring insight on the fundamental problem of ferroelectricity at low thickness and confirm the potential of BiFeO₃ as a lead-free ferroelectric and multiferroic material for nanoscale devices.

URL: http://jjap.jsap.jp/link?JJAP/45/L187/
DOI: 10.1143/JJAP.45.L187

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References | Citing Articles (30)

1. J. F. Scott: Ferroelectric Memories (Springer-Verlag, Berlin, 2000).
2. C. H. Ahn, K. M. Rabe and J.-M. Triscone: Science 303 (2004) 488[Science].
3. J. Junquera and P. Ghosez: Nature 422 (2003) 506[CrossRef].
4. N. Sai, A. M. Kolpak and A. M. Rappe: Phys. Rev. B 72 (2005) 020101[APS].
5. P. Ghosez and K. M. Rabe: Appl. Phys. Lett. 76 (2000) 2767[AIP Scitation].
6. B. Meyer and D. Vanderbilt: Phys. Rev. B 63 (2001) 2054426[APS].
7. D. J. Kim, J. Y. Jo, Y. S. Kim, Y. J. Chang, J. S. Lee, J.-G. Yoon, T. K. Song and T. W. Noh: Phys. Rev. Lett. 95 (2005) 237602[APS].
8. Y. S. Kim, D. H. Kim, J. D. Kim, Y. J. Chang, T. W. Noh, J. H. Kong, K. Char, Y. D. Park, S. D. Bu, J.-G. Yoon and J.-S. Chung: Appl. Phys. Lett. 86 (2005) 102907[AIP Scitation].
9. T. Tybell, C. H. Ahn and J.-M. Triscone: Appl. Phys. Lett. 75 (1999) 856[AIP Scitation].
10. C. Lichtensteiger, J.-M. Triscone, J. Junquera and P. Ghosez: Phys. Rev. Lett. 94 (2005) 047603[APS].
11. D. D. Fong, G. B. Stephenson, S. K. Streiffer, J. A. Eastman, O. Auciello, P. H. Fuoss and C. Thompson: Science 304 (2004) 1650[Science].
12. L. Despont, C. Lichtensteiger, C. Koitzsch, F. Clerc, M. G. Garnier, F. J. Garcia de Abajo, E. Bousquet, Ph. Ghosez, J.-M. Triscone and P. Aebi: cond-mat/0511084[e-print arXiv].
13. A. M. Kadomtseva, A. K. Zvezdin, Yu. F. Popov, A. P. Pyatakov and G. P. Vorob'ev: JETP Lett. 79 (2004) 571[AIP Scitation].
14. M. Fiebig: J. Phys. D 38 (2005) R1-30.
15. G. A. Smolenskii, V. M. Yudin, E. S. Sher and Y. E. Stolypin: Sov. Phys. JETP 16 (1963) 622.
16. P. Fischer, M. Polomska, I. Sosnowska and M. Szymanski: J. Phys. C 13 (1980) 1931.
17. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig and R. Ramesh: Science 299 (2003) 1719[Science].
18. F. Bai, J. Wang, M. Wuttig, J. Li, N. Wang, A. P. Pyatakov, A. K. Zvezdin, L. E. Cross and D. Viehland: Appl. Phys. Lett. 86 (2005) 032511[AIP Scitation].
19. D. Lee, M. G. Kim, S. Ryu, H. M. Jang and S. G. Lee: Appl. Phys. Lett. 86 (2005) 222903[AIP Scitation].
20. H. Béa, M. Bibes, A. Barthélémy, K. Bouzehouane, E. Jacquet, A. Khodan, J.-P. Contour, S. Fusil, F. Wyczisk, A. Forget, D. Lebeugle, D. Colson and M. Viret: Appl. Phys. Lett. 87 (2005) 072508[AIP Scitation].
21. H. Béa, M. Bibes, M. Sirena, G. Herranz, K. Bouzehouane, E. Jacquet, S. Fusil, P. Paruch, M. Dawber, J.-P. Contour and A. Barthélémy: to be published in Appl. Phys. Lett.
22. F. Zavaliche, R. R. Das, D. M. Kim, C. B. Eom, S. Y. Yang, P. Shafer and R. Ramesh: Appl. Phys. Lett. 87 (2005) 182912[AIP Scitation].

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