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Jpn. J. Appl. Phys. 45 (2006) pp. L605-L607  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Low Pressure Chemical Vapor Deposition of Single-Wall Carbon Nanotubes

Takao Shiokawa1,2, Bao-Ping Zhang1,2, Masaki Suzuki1,2 and Koji Ishibashi1,2

1Advanced Device Laboratory, The Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
2CREST, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan

(Received February 24, 2006; accepted April 26, 2006; published online June 9, 2006)

Single-wall carbon nanotubes (SWCNTs) have been grown by catalytic chemical vapor deposition (CCVD) at 0.05 Pa using an ultrahigh-vacuum chamber. The characterization of SWCNTs grown at various temperatures and pressures has been carried out by Raman spectroscopy and scanning electron microscopy. Our main finding is that SWCNTs could be grown even at 0.05 Pa, which is much lower than that used in standard CCVD. Moreover, the growth temperature for obtaining the maximum intensity of the G+ Raman signal at 0.05 Pa was lower (by more than 100 °C) than the commonly used temperature at ∼1 kPa.

URL: http://jjap.jsap.jp/link?JJAP/45/L605/
DOI: 10.1143/JJAP.45.L605
KEYWORDS:single-wall carbon nanotube, alcohol catalytic chemical vapor deposition, low gas pressure, ultrahigh vacuum


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