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Jpn. J. Appl. Phys. 45 (2006) pp. L659-L662  |Next Article|  |Table of Contents|
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Express Letter

Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates

Mitsuru Funato, Masaya Ueda, Yoichi Kawakami, Yukio Narukawa¹, Takao Kosugi¹, Masayoshi Takahashi¹ and Takashi Mukai¹

Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
¹Nitride Semiconductor Research Laboratory, Nichia Corporation, Tokushima 774-8601, Japan

(Received June 10, 2006; accepted June 17, 2006; published online June 30, 2006)

We demonstrate the fabrication of blue, green, and amber InGaN/GaN light-emitting diodes (LEDs) on semipolar {11-22} bulk GaN substrates. The {11-22}GaN substrates used in this study are produced by cutting out from a c-oriented GaN bulk crystal grown by hydride vapor epitaxy. The LEDs have a dimension of 320 ×320 µm² and are packed in an epoxide resin. The output power and external quantum efficiency (EQE) at a driving current of 20 mA are 1.76 mW and 3.0%, respectively, for the blue LED, 1.91 mW and 4.1% for the green LED, and 0.54 mW and 1.3% for the amber LED. The maximum output powers obtained with a maximum current of 200 mA are 19.0 mW (blue), 13.4 mW (green), and 1.9 mW (amber), while the maximum EQEs are 4.0% at 140 mA (blue), 4.9% at 0.2 mA (green), and 1.6% at 1 mA (amber). It is confirmed that the emission light is polarized along the [1-100] direction, reflecting the low crystal symmetry of the {11-22} plane.

URL: http://jjap.jsap.jp/link?JJAP/45/L659/
DOI: 10.1143/JJAP.45.L659

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