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Jpn. J. Appl. Phys. 45 (2006) pp. L730-L733  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy

Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani and Akihiko Yoshikawa

Department of Electronics and Mechanical Engineering, Center for Frontier Electronics and Photonics, and InN-Project as a CREST program of JST, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

(Received May 3, 2006; accepted June 4, 2006; published online July 14, 2006)

The step-flow mode growth of an In-polar InN epilayer on a GaN template was achieved by molecular beam epitaxy. A uniform terrace structure was observed with a step height of one monolayer. The surface rms roughness was less than 1 nm over a 10×10 µm² area. To obtain the step-flow mode growth, it was preferable to use a slightly In-rich growth condition in the In-polarity growth regime, a GaN template of low dislocation density, and a high epitaxial temperature. A typical electron concentration of bulk InN was 5–6×10¹⁷ cm^-3 with a Hall mobility of 1400 cm²/(V s).

URL: http://jjap.jsap.jp/link?JJAP/45/L730/
DOI: 10.1143/JJAP.45.L730

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