Jpn. J. Appl. Phys. 46 (2007) pp. 1186-1188 |Previous Article| |Next Article| |Table of Contents|
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Brief Communication
High-Efficiency Green Phosphorescent Organic Light-Emitting Devices with Chemically Doped Layers
Soichi Watanabe1,
Nobuhiro Ide2, and
Junji Kido1,2,3
1Graduate School of Science and Engineering, Yamagata University, Yonezawa, Yamagata 992-8510, Japan
2Optoelectronic Industry and Technology Development Association, Bunkyo-ku, Tokyo 112-0014, Japan
3Research Institute for Organic Electronics, Yonezawa, Yamagata 992-1128, Japan
(Received November 13, 2006; revised November 23, 2006; accepted November 29, 2006; published online March 8, 2007)
We have developed green phosphorescent organic light-emitting devices (OLEDs) with high quantum and luminous efficiencies. A green phosphorescent metal complex, fac-tris(2-phenylpyridine) iridium [Ir(ppy)3], was used as an emitter material. Wide-energy-gap materials with high triplet excited energy levels were used as host materials for Ir(ppy)3 and as carrier transport materials. Hole injection and electron injection from the electrodes were balanced by placing chemically doped layers at the interface between the electrodes and the organic layers. In addition, a highly reflective Ag cathode was employed as an anode, instead of a conventional Al cathode to enhance the reflectivity of the cathode metal. An optimized device exhibited an external quantum efficiency (EQE) of 27% (95 cd/A) and a high power efficiency of 97 lm/W at 100 cd/m2 at 3.1 V.
URL:
http://jjap.jsap.jp/link?JJAP/46/1186/
DOI: 10.1143/JJAP.46.1186
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