Jpn. J. Appl. Phys. 46 (2007) pp. 1859-1864  |Previous Article| |Next Article|  |Table of Contents|
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Diffusion Control Techniques for TiN Stacked Metal Gate Electrodes for p-Type Metal Insulator Semiconductor Field Effect Transistors

Shinsuke Sakashita, Takaaki Kawahara, Masaharu Mizutani, Masao Inoue, Kenichi Mori, Shinichi Yamanari, Masahiko Higashi, Yukio Nishida, Kazuhito Honda, Naofumi Murata, Junichi Tsuchimoto, Jiro Yugami, Hidefumi Yoshimura, and Masahiro Yoneda

(Received September 14, 2006; accepted November 21, 2006; published online April 24, 2007)

We have investigated a polycrystalline silicon (poly-Si)/chemical vapor deposited titanium nitride (CVD-TiN) stacked structure as a metal gate with a high-k for p-type metal insulator semiconductor field effect transistors (p-MISFETs). A divided-CVD method provided an appropriate effective work function (4.9–5.2 eV) on HfSiON for p-MISFETs. However, the deposition of poly-Si on CVD-TiN films shifted the effective work function to a midgap (∼4.6 eV), and Ti, Hf, and Si diffused into poly-Si/CVD-TiN/high-k structures during poly-Si deposition. Then, we found that an increase in the deposition temperature of CVD-TiN films and the insertion of a physical vapor deposited (PVD)-TiN film between the poly-Si and CVD-TiN layers are effective in suppressing these diffusions. In particular, the insertion of the PVD-TiN film provided an appropriate effective work function of 4.9 eV. Therefore, we found that the diffusion control techniques for poly-Si/TiN/high-k stacked structures are highly effective for obtaining the appropriate work function for p-MISFETs.

URL: http://jjap.jsap.jp/link?JJAP/46/1859/
DOI: 10.1143/JJAP.46.1859

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