Jpn. J. Appl. Phys. 46 (2007) pp. 3347-3350  |Previous Article| |Next Article|  |Table of Contents|
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Impact Ionization Behavior in Bulk Fin Field Effect Transistors with Fin Body Width and Bias Conditions

Sang-Yun Kim, Young Min Kim, Kwang-Ho Baek, Ki-Heung Park, Kyoung-Rok Han, Byung-Kil Choi, and Jong-Ho Lee

(Received August 16, 2006; accepted February 20, 2007; published online June 6, 2007)

The impact ionization behavior of bulk fin field effect transistors (FinFETs) was investigated with respect to fin body width (W_fin) and bias conditions. As fin width decreases to less than about 50 nm, the effect of parasitic source/drain series resistance becomes significant, resulting in a decrease in the impact ionization rate due to the increasing voltage drop across the resistance. We analyzed the I_SUB/I_D trend depending on the bias conditions (V_GS=V_DS and V_GS=V_DS/2) for devices with a W_fin thicker than 50 nm. Through two-dimensional device simulation, we showed the voltage drop and the peak electron temperature for various W_fin. It was also shown that the contact resistivity between the source/drain and the metal electrode is very important in the bulk FinFET with a very thin fin width.

URL: http://jjap.jsap.jp/link?JJAP/46/3347/
DOI: 10.1143/JJAP.46.3347
KEYWORDS:impact ionization, I_SUB/I_D, bulk FinFET, fin width, series resistance

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