Jpn. J. Appl. Phys. 46 (2007) pp. 4138-4143  |Previous Article| |Next Article|  |Table of Contents|
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Very-Deep Nanometer-Size Domain Inversion in LiNbO3: Proposal for Circular Form Full Cover Electrodes

Makoto Minakata, M. S. Islam1, Shigehiro Nagano, Satoshi Yoneyama, Tatsuhiko Sugiyama, and Haruyuki Awano

Optoelectronics Laboratory, Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan
1Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka 1000, Bangladesh

(Received January 17, 2007; accepted April 9, 2007; published online July 4, 2007)

Very-deep nanometer-size domain inversions in lithium niobate (LiNbO3) substrate have been realized using circular form full cover electrode (CF-FCE). From the calculated results, circular form electrode is better than that of rectangular type for fine domain inversion patterns. Domain inversion was performed by applying high voltage to CF-FCE. Using the proposed CF-FCE, we successfully fabricated 2 µm periodic domain inversion in a 500-µm-thick congruent LiNbO3 (C-LN) crystal. It is also shown that smaller domain inversion width in the nanometer regime with high aspect ratio is possible using this technique. We obtained an aspect ratio as high as 870 for a domain inversion width of 575 nm. To our knowledge, such a high aspect ratio is reported for the first time.

URL: http://jjap.jsap.jp/link?JJAP/46/4138/
DOI: 10.1143/JJAP.46.4138


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