Jpn. J. Appl. Phys. 46 (2007) pp. 4193-4196  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (120K)| |Buy This Article|

Electrical Characteristics and Preparation of Nanostructured Pb(Zr0.5Ti0.5)O3 Films by Spray Pyrolysis

Horng-Show Koo1,3, Mi Chen2,, Yoichi Hotta3, and Tomoji Kawai3

1Department of Optoelectronic System Engineering, Ming-Hsin University of Science and Technology, Hsinchu 301, Taiwan, R.O.C.
2Department of Materials Science and Engineering, Ming-Hsin University of Science and Technology, Hsinchu 301, Taiwan, R.O.C.
3Nanoscience and Nanotechnology Center, The Institute of Scientific Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan

(Received September 15, 2006; revised December 28, 2006; accepted March 14, 2007; published online July 4, 2007)

Nanostructured thin films of Pb(Zr0.5Ti0.5)O3 on Pt (1000 Å)/Ti (100 Å)/SiO2 (2000 Å)/Si substrates are prepared by spray pyrolysis and subsequently rapid thermal annealing. Lead nitrate, zirconium nitrate and titanium isopropoxide are used as starting material with ethylene glycol as solvent. The crystal structure of the as-sprayed films are transformed from the amorphous, pyrochlore and multiple phases of pyrochlore and perovskite to the single phase of perovskite as the annealing temperature is increased up to 500 °C. For the formation of single phase perovskite, excess lead of 10 mol % is required to compensate the loss of lead during the processing of the primitive films. The physical characteristics of the resultant films show the dielectric constant (εr) of 400, remanent polarization (2Pr) of 30.0 µC/cm2 and coercive field (2Ec) of 70.0 kV/cm, respectively.

URL: http://jjap.jsap.jp/link?JJAP/46/4193/
DOI: 10.1143/JJAP.46.4193


|Full Text PDF (120K)| |Buy This Article| Citation:


References

  1. R. Moazzami, P. D. Maniar, R. E. Jones, A. C. Campbell, and C. J. Mogab: IEDM Tech. Dig., 1992, p. 973.
  2. R. Moazzami, C. Hu, and W. H. Shepherd: IEEE Trans. Electron Devices 39 (1992) 2044[CrossRef].
  3. J. F. Scott and C. A. Paz de Araujo: Science 246 (1989) 1400
  4. R. Thomas, S. Mochizuki, T. Mihara, and T. Ishida: Thin Solid Films 413 (2002) 65[CrossRef].
  5. S. G. Ghonge, E. Goo, R. Ramesh, T. Sands, and V. G. Keramidas: J. Am. Ceram. Soc. 76 (1993) 3141[CrossRef].
  6. N. Scarisoreanu, F. Cracium, G. Dinescu, P. Verardi, and M. Dinescu: Thin Solid Films 453–454 (2004) 399[CrossRef].
  7. Y. Otani, N. Abe, M. Miyake, S. Okamura, and T. Shiosaki: Jpn. J. Appl. Phys. 44 (2005) 5133[JSAP].
  8. H. Huang, X. Yao, X. Q. Wu, M. Q. Wang, and L. Y. Zhang: Thin Solid Films 458 (2004) 71[CrossRef]; E. A. Delikourase and D. D. Perlmutter: J. Am. Ceram. Soc. 77 (1994) 3142[CrossRef].
  9. D. Van Genechten, G. Vanhoyland, J. D'Haen, J. Johnson, D. J. Wouters, M. K. Van Bael, H. Van den Rul, J. Mullens, and L. C. Van Poucke: Thin Solid Films 467 (2004) 104[CrossRef].
  10. G. L. Messing, S. Zhang, and G. V. Jayanthi: J. Am. Ceram. Soc. 76 (1993) 2707[CrossRef].
  11. A. R. Raju and C. N. R. Rao: Appl. Phys. Lett. 66 (1995) 896[AIP Scitation].
  12. J. O. Olowolafe, R. E. Jones, Jr., A. Campbell, R. I. Hegde, C. J. Mogab, and R. B. Gregory: J. Appl. Phys. 73 (1993) 1764[AIP Scitation].
  13. K. Sreenivas, I. Reaney, T. Maeder, N. Setter, C. Jagadish, and R. G. Elliman: J. Appl. Phys. 75 (1994) 232[AIP Scitation].
  14. K. Sreeivas, M. Sayer, and P. Garret: Thin Solid Films 172 (1989) 251[CrossRef].
  15. B. A. Tuttle, R. W. Schwartz, D. H. Doughtly, and J. A. Voigt: Mater. Res. Soc. Symp. Proc. 200 (1990) 363.
  16. S. D. Bernstein, Y. Kisler, J. M. Wahl, S. E. Bernacki, and S. R. Collins: Mater. Res. Soc. Symp. Proc. 243 (1990) 373.
  17. H. C. Ling, A. M. Jackson, M. F. Yang, and W. W. Rhodes: J. Mater. Res. 5 (1990) 629.
  18. F. Yang, P. Bao, H. L. W. Chan, C. L. Choy, and Y. Wang: Thin Solid Films 406 (2002) 282[CrossRef].
  19. Y. Shimamoto, K. K. Abdelghafar, H. Miki, and Y. Fujisakai: Appl. Phys. Lett. 70 (1997) 3096[AIP Scitation].
  20. M. G. Kang, K. T. Kim, and C. I. Kim: Thin Solid Films 398–399 (2001) 448[CrossRef].
  21. E. G. Lee, D. J. Wouters, G. Willems, and H. E. Maes: Appl. Phys. Lett. 70 (1997) 2404[AIP Scitation].

|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information