Jpn. J. Appl. Phys. 46 (2007) pp. 4265-4267  |Previous Article| |Next Article|  |Table of Contents|
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Brief Communication

Cation-Mediated Effects on Zinc Oxide Films Formed by Chemical Bath Deposition

Hua-Chi Cheng1,2, Chia-Fu Chen1, and Chien-Yie Tsay3

1Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, R.O.C.
2Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Chutung, Hsinchu 31040, Taiwan, R.O.C.
3Department of Materials Science and Engineering, Feng Chia University, Taichung 31040, Taiwan, R.O.C.

(Received November 22, 2006; revised March 1, 2007; accepted April 7, 2007; published online July 4, 2007)

Crystalline ZnO films with a densely packed morphology were grown on a silicon oxide (SiOx) glass substrate by chemical bath deposition (CBD) in an aqueous-solution bath containing magnesium nitrate [Mg(NO3)2·2H2O] used as a cation-mediation compound, zinc nitrate [Zn(NO3)2·6H2O], and dimethylamineborane (DMAB) at 65 °C. Grains of ZnO films grown in nonmediated solution preferentially grew on the (002) plane. In the cation-mediated-solution bath, the films were compressed into a compact morphology by the increased tendency for films to grow in the (002) prefer orientation. The crystalline ZnO film exhibits good optical transmittance of over 90%. Additionally, the direct band-gap value was 3.22 eV, which is less than 3.38 eV, which was obtained using a nonmediated-solution bath. This was due to the lattice constant variation caused by cation mediation.

URL: http://jjap.jsap.jp/link?JJAP/46/4265/
DOI: 10.1143/JJAP.46.4265


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References | Citing Articles (2)

  1. K. Keis, E. Magnusson, H. Lindstorm, S. E. Lindquist, and A. Hagfeldt: Sol. Energy Mater. Sol. Cells 73 (2002) 51.
  2. S. Liang, H. Sheng, Y. Liu, Z. Hio, Y. Lu, and H. Shen: J. Cryst. Growth 225 (2001) 110[CrossRef].
  3. N. Saito, H. Haneda, T. Sekiguchi, N. Ohashi, I. Sakaguchi, and K. Koumoto: Adv. Mater. 14 (2002) 418[CrossRef].
  4. P. Mitra, A. P. Chatterjee, and H. S. Maiti: Mater. Lett. 35 (1998) 33.
  5. F. C. M. Van de Pol: Ceram. Bull. 69 (1990) 1959.
  6. Y. E. Yee, J. B. Lee, Y. J. Kim, H. K. Yang, J. C. Park, and H. J. Kim: J. Vac. Sci. Technol. A 14 (1996) 1943[AIP Scitation].
  7. V. Craciun, J. Elders, J. G. E. Gardenievs, and I. W. Boyd: Appl. Phys. Lett. 65 (1994) 2963[AIP Scitation].
  8. Y. Natsume, H. Sakata, and T. Hirayama: Phys. Status Solidi A 148 (1995) 485[CrossRef].
  9. K. Ogata, K. Sakurai, S. Fujita, S. Fujita, and K. Matsushige: J. Cryst. Growth 214–215 (2000) 312[CrossRef].
  10. Y. Natsume and H. Sakata: Thin Solid Films 372 (2000) 30[CrossRef].
  11. T. Saeed and P. O'Brien: Thin Solid Films 271 (1995) 35[CrossRef].
  12. L. G. Svendsen, T. Osaka, and H. Sawai: J. Electrochem. Soc. 130 (1983) 2252.
  13. C. H. de Minjer and P. F. J. V. D. Boom: J. Electrochem. Soc. 120 (1973) 1644.
  14. International Centre for Diffraction Datas: Joint Committee on Powder Diffraction Standards, Swarthmore, PA, 1986, Card No. 36-1451.
  15. P. Li, Y. Wei, H. Liu, and X. K. Wang: J. Solid State Chem. 178 (2005) 855[CrossRef].
  16. M. Charbonnier and M. Romand: Int. J. Adhes. Adhes. 23 (2003) 277.
  17. R. D. Shannon: Acta Crystallogr., Sect. A 32 (1976) 751.
  18. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle: Phys. Rev. B 61 (2000) 15019[APS].
  19. R. D. Tarey and T. A. Raju: Thin Solid Films 128 (1985) 181[CrossRef].

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