Jpn. J. Appl. Phys. 46 (2007) pp. 5233-5237  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (382K)| |Buy This Article|

Growth of β-FeSi₂ Layers on Si(100) Substrates by Exchange Reaction between Si and Molten Salts

Tsuyoshi Yoneyama, Takeshi Yoshikawa¹, and Kazuki Morita¹

(Received March 26, 2007; accepted April 25, 2007; published online August 6, 2007)

The growth of β-FeSi₂ layers on Si(100) substrates by a cation exchange reaction between Si and molten NaCl–KCl–FeCl₂ salts, namely, 5Si(s)+2FeCl₂(l)=2β-FeSi₂(s)+SiCl₄(g), has been investigated. A single-crystal Si(100) substrate was reacted with the molten salt at 1173 K for 1–64 h in Ar or He atmosphere. The grown layers were characterized by X-ray diffraction (XRD) measurement, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). When the FeCl₂ concentration in molten salt was as low as 0.02 mol %, a β-FeSi₂ single layer was obtained, although the double layer of FeSi/β-FeSi₂ formed with a higher FeCl₂ concentration of 0.1–1.0 mol %. The β-FeSi₂ single layer grown at low FeCl₂ concentration had a rough surface structure due to the decrease in driving force caused by the consumption of FeCl₂ during the reaction. By annealing a flat double layer of FeSi/β-FeSi₂ formed with a higher FeCl₂ concentration where the driving force could be kept constant, a flat β-FeSi₂ single layer was obtained on the Si(100) substrate.

URL: http://jjap.jsap.jp/link?JJAP/46/5233/
DOI: 10.1143/JJAP.46.5233

References | Citing Articles (2)

1. T. Suemasu, N. Hiroi, T. Fujii, K. Takakura, and F. Hasegawa: Jpn. J. Appl. Phys. 38 (1999) L878[JSAP].
2. N. Hiroi, T. Suemasu, K. Takakura, N. Seki, and F. Hasegawa: Jpn. J. Appl. Phys. 40 (2001) L1008[JSAP].
3. M. C. Bost and J. E. Mahan: J. Appl. Phys. 58 (1985) 2696[AIP Scitation].
4. Y. Maeda, K. Umezawa, Y. Hayashi, K. Miyake, and K. Ohashi: Thin Solid Films 381 (2001) 256[CrossRef].
5. T. Suemasu, M. Tanaka, T. Fujii, S. Hashimoto, Y. Kumagai, and F. Hasegawa: Jpn. J. Appl. Phys. 36 (1997) L1225[JSAP].
6. T. Ohishi, Y. Mizuyoshi, T. Matsuyama, H. Tatsuoka, and H. Kuwabara: Thin Solid Films 461 (2004) 63[CrossRef].
7. Y. Dusausoy, J. Protas, R. Wandji, and B. Roques: Acta Crystallogr., Sect. B 27 (1971) 1209.
8. M. Ishimaru, K. Omae, I. Bae, M. Naito, and Y. Hirotsu: J. Appl. Phys. 99 (2006) 113527[AIP Scitation].
9. J. E. Mahan, K. M. Geib, R. Y. Robinson, R. G. Long, Y. Xinghua, G. Bai, M. Nicolet, and M. Nathan: Appl. Phys. Lett. 56 (1990) 2126[AIP Scitation].