Jpn. J. Appl. Phys. 46 (2007) pp. 6105-6112  |Next Article|  |Table of Contents|
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Extreme Ultraviolet Lithography Development in the United States

Stefan Wurm

(Received November 29, 2006; accepted April 23, 2007; published online September 20, 2007)

The extreme ultraviolet lithography (EUVL) development effort in the United States, at universities, national laboratories, and semiconductor consortia, is focused on solving critical infrastructure issues in the mask, mask handling, source, optics, and resist areas. The current maturity of EUVL infrastructure will likely be sufficient to support the first full-field EUVL exposure tools that have been delivered in 2006. However, a significant effort is still required to make the EUVL infrastructure ready for EUVL manufacturing insertion later this decade. This paper reviews the current status of EUVL infrastructure development in the United States and reports recent progress in EUV mask blank development, EUV source collector and projection optics lifetime, and the evaluation of EUV resist performance.

URL: http://jjap.jsap.jp/link?JJAP/46/6105/
DOI: 10.1143/JJAP.46.6105

References | Citing Articles (12)

1. International Technology Roadmap for Semiconductors (http://public.itrs.net).
2. SEMATECH Litho Forum, Vancouver, BC, May 23–24, 2006 (http://www.sematech.org/meetings/archives/litho/7810).
3. Lord Rayleigh: Philos. Mag. 8 (1879) 261.
4. J. Underwood and T. Barbee, Jr.: Nature 294 (1981) 429[CrossRef].
5. T. Barbee, S. Mrowka, and M. Hettrick: Appl. Opt. 24 (1985) 883.
6. H. Kinoshita, K. Kurihara, Y. Ishii, and Y. Torii: J. Vac. Sci. Technol. B 7 (1989) 1648[AIP Scitation].
7. A. M. Hawryluk and L. G. Seppala: J. Vac. Sci. Technol. B 6 (1988) 2162[AIP Scitation].
8. W. T. Silfvast and O. R. Wood, II: Microelectron. Eng. 8 (1988) 3.
9. J. Bjorkholm, J. Bokor, L. Eichner, R. Freeman, J. Gregus, T. Jewell, W. Mansfield, A. MacDowell, E. Raab, W. Silfvast, L. Szeto, D. Tennant, W. Waskiewicz, D. White, D. Windt, O. Wood, and J. Bruning: J. Vac. Sci. Technol. B 8 (1990) 1509[AIP Scitation].
10. K. B. Nguyen, G. F. Cardinale, D. A. Tichenor, G. D. Kubiak, K. Berger, A. K. Ray-Chaudhuri, Y. Perras, S. J. Haney, R. Nissen, K. Krenz, R. H. Stulen, H. Fujioka, C. Hu, J. Bokor, D. M. Tennant, and L. A. Fetter: OSA TOPS Extreme Ultraviolet Lithography (Optical Society of America, Washington, D.C., 1996) Vol. 4.
11. C. W. Gwyn and S. Wurm: to be published in EUV Lithography, ed. V. Bakshi (SPIE Press, Bellingham, WA, 2007).
12. D. A. Tichenor, A. K. Ray-Chaudhuri, W. C. Replogle, R. H. Stulen, G. D. Kubiak, P. D. Rockett, L. E. Klebanoff, K. J. Jefferson, A. H. Leung, J. B. Wronosky, L. C. Hale, H. N. Chapman, J. S. Taylor, J. A. Folta, C. Montcalm, R. Soufli, E. A. Spiller, K. L. Blaedel, G. E. Sommargren, D. W. Sweeney, P. P. Naulleau, K. A. Goldberg, E. M. Gullikson, J. Bokor, P. J. Batson, D. T. Attwood, Jr., K. H. Jackson, S. D. Hector, C. W. Gwyn, and P. Yan: Proc. SPIE 4343 (2001) 19[AIP Scitation].
13. S. Wurm and C. W. Gwyn: in Microlithography: Science and Technology, ed. K. Suzuki (CRC Press/Taylor & Francis Informa Group, Boca Raton, FL, 2007) 2nd ed., chap. 8.
14. SEMATECH Inc., U.S.A. (http:/www.sematech.org).
15. A. Ma, P. Kearney, D. Krick, R. Randive, I. Reiss, P. Mirkarimi, and E. Spiller: Proc. SPIE 5751 (2005) 168[AIP Scitation].
16. K. Lowack, A. Rudack, K. Dean, M. Malloy, and M. Lercel: Proc. SPIE 6151 (2006) 61512U[AIP Scitation].
17. Microelectronics Development for European Applications+ (MEDEA+), France (http://www.medeaplus.org).
18. Interuniversity MicroElectronics Center (IMEC), Belgium (http://www.imec.be).
19. Association of Super-Advanced Electronics Technologies (ASET), Japan (http://www.aset.or.jp).
20. T. Watanabe, K. Mashima, M. Niibe, and H. Kinoshita: Jpn. J. Appl. Phys. 36 (1997) 7597[JSAP].
21. H. Kinoshita, T. Watanabe, D. Bajuk, J. Daniel, Y. Kimpara, M. Kriese, and Y. Platonov: Proc. SPIE 3767 (1999) 164[AIP Scitation].
22. Extreme UltraViolet Lithography System Development Association (EUVA), Japan (http://www.euva.or.jp).
23. Semiconductor Leading Edge Technologies (Selete) (http://www.selete.co.jp).
24. International EUV Initiative (IEUVI) (http://www.ieuvi.org).
25. P. Gargini, G. Edwards, K. Dean, P. Seidel, K. Toyoda, V. Bakshi,, S. Wurm, Y. Takamori, G. Dao, S. Tedesco, S. Okazaki, M. Ogawa, and D. Gotz: Future Fab Int. 21 (2006) 82.
26. Proc. 5th Int. Extreme Ultraviolet Lithography Symp., Barcelona, Spain, 16–18 October 2006 (https://www.sematech.org/7870).
27. Often line width roughness (LWR) is quoted instead of LER. If LER and CD variation are completely uncorrelated then LWR = LER√2. However, in practice LWR is often somewhat larger than LER√2.
28. P.-Y. Yan: in Handbook of Photomask Manufacturing Technology, ed. S. Rizvi (CRC Press/Taylor & Francis Informa Group, Boca Raton, FL, 2005).
29. O. Wood: Jpn. J. Appl. Phys. 45 (2006) 5349[JSAP].
30. SEMI P37-1102, Specification for Extreme Ultraviolet Lithography Mask Substrates, Semiconductor Equipment Materials International, San Jose, CA, 2002.
31. S. Wurm: Proc. SPIE 5835 (2005) 212[AIP Scitation].
32. P. B. Mirkarimi, E. Spiller, S. L. Baker, J. C. Robinson, T. Liang, A. R. Stivers, and S. Park: Proc. 4th Int. Extreme Ultraviolet Lithography Symp., San Diego, CA, 7–9 November 2005 (https://www.sematech.org/7470).
33. R. Randive, P. Mirkarimi, E. Spiller, A. Ma, P. Kearney, S. Han, S. Seo, T. Uno, and D. Krick: Proc. 4th Int. Extreme Ultraviolet Lithography Symp., San Diego, CA, 7–9 November 2005 (https://www.sematech.org/7470).
34. SEMI P38-1103, Specification for Absorbing Film Stacks and Multilayers on Extreme Ultraviolet Lithography Mask Blanks, Semiconductor Equipment Materials International, San Jose, CA, 2003.
35. Y. Tezuka, M. Ito, T. Terasawa, and T. Tomie: Proc. SPIE 5374 (2004) 271[AIP Scitation].
36. K. A. Goldberg, A. Barty, H. Han, S. Wurm, P. Kearney, P. Seidel, O. Wood, B. La Fontaine, T. Liang, C. Holfeld, R. Fettig, Y. Tezuka, and T. Terasawa: in ref. 26.
37. M. Corthout, R. Apetz, K. Bergmann, G. Derra, J. Jonkers, J. Pankert, and P. Zink: in ref. 26.
38. A. Hassanein, J. P. Alain, V. Sizyuk, and V. Bakshi: SEMATECH EUV Source Workshop, Barcelona, Spain, October 19, 2006 (http://www.sematech.org/meetings/archives.htm).
39. H. Meiling, R. Groeneveld, H. Meijer, U. Mickan, H.-J. Voorma, N. Harned, and J. Zimmerman: in ref. 26.
40. SEMATECH Optics Lifetime and Contamination Workshops 2003–2006 (http://www.sematech.org/meetings/archives.htm).
41. T. E. Madey, B. V. Yakshinskiy, R. Wasielewski, M. N. Hedhili, and E. Loginova: in ref. 26.
42. M. Shell, R. Bristol, H. Cao, M. Chandhok, M. Leeson, J. Macy, K. Orvek, and A. Stivers: in ref. 26.
43. M. Leeson, H. Cao, W. Yueh, R. Meagley, G. Sharma, and S. Sharma: in ref. 26.
44. T. Wallow, B. La Fontaine, R. Sandberg, R. Kim, U. Okoroanyanwu, R. Nassar, K. Spear-Alfonso, and J. Thackeray: in ref. 26.