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Jpn. J. Appl. Phys. 46 (2007) pp. 6202-6204  |Previous Article| |Next Article|  |Table of Contents|
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Characteristics of Nano-Floating-Gate Memory with Au Nanoparticles in SiO2 Dielectrics

Min Seung Lee1,2, Dong Uk Lee1, Jae-Hoon Kim1, Eun Kyu Kim1, Won Mok Kim2, and Won-Ju Cho3

1Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Korea
2Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 130-650, Korea
3Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea

(Received October 27, 2006; accepted March 22, 2007; published online September 20, 2007)

Nano-floating-gate memory (NFGM) devices containing SiO2 layers embedded with nanoparticles were fabricated, and their electrical characteristics were evaluated. The Au nanoparticles were successfully fabricated by the horizontal sputtering and served as a charge storage node of the NFGM devices. The size and density of the Au nanoparticles were easily controlled by setting the sputtering thickness of the Au thin film used. The memory window of the fabricated NFGM devices on a silicon-on-insulator substrate was about 3 V at a gate bias of ±10 V. The feasibility of using Au nanoparticles dispersed in SiO2 oxide layers for NFGM device application was also presented.

URL: http://jjap.jsap.jp/link?JJAP/46/6202/
DOI: 10.1143/JJAP.46.6202


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