Jpn. J. Appl. Phys. 46 (2007) pp. L1111-L1113  |Table of Contents|
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Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method

Naomu Kitano, Shinya Horie, Hiroaki Arimura, Takaaki Kawahara, Shinsuke Sakashita, Yukio Nishida, Jiro Yugami, Takashi Minami, Motomu Kosuda, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe

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