Jpn. J. Appl. Phys. 46 (2007) pp. L1152-L1154 |Previous Article| |Next Article| |Table of Contents|
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Letter
Theoretical Analysis of Amorphous Silicon Alloy Based Triple Junction Solar Cells
Ihsanul Afdi Yunaz,
Akira Yamada1, and
Makoto Konagai
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
1Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
(Received October 12, 2007; accepted November 1, 2007; published online November 30, 2007)
A theoretical analysis using analysis of microelectronic and photonic structures (AMPS-1D) has been performed to investigate for the first time the most preferred bandgap combination of amorphous silicon alloy based triple junction solar cells. We employed our new tunnel-recombination junction (TRJ) model to simulate the characteristics of a triple cell as a complete single device. We calculated two cases, hydrogenated microcrystalline silicon (µc-Si:H) as the bottom cell and as the middle cell. For both cases we found that a 2.0 eV top cell band gap is required to achieve efficiency of over 20%.
URL:
http://jjap.jsap.jp/link?JJAP/46/L1152/
DOI: 10.1143/JJAP.46.L1152
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