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Jpn. J. Appl. Phys. 46 (2007) pp. L1206-L1208  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Single-Mode Operation of GaInAsP/InP-Membrane Distributed Feedback Lasers Bonded on Silicon-on-Insulator Substrate with Rib-Waveguide Structure

Tadashi Okumura¹, Takeo Maruyama^1,2, Masaki Kanemaru¹, Shinichi Sakamoto¹, and Shigehisa Arai^1,2

¹Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
²CREST, Japan Science and Technology Agency, Kawaguchi Center Building, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

(Received August 10, 2007; accepted November 12, 2007; published online December 7, 2007)

Room-temperature continuous-wave operation under optical pumping was demonstrated using GaInAsP/InP membrane distributed feedback (DFB) lasers directly bonded on a silicon-on-insulator (SOI) substrate formed with a rib-waveguide structure. A threshold pump power of 11.3 mW and a submode suppression ratio of 29 dB were obtained for a cavity length of 140 µm and a stripe width of 1.5 µm. Light output was obtained through a 500 µm-long SOI waveguide.

URL: http://jjap.jsap.jp/link?JJAP/46/L1206/
DOI: 10.1143/JJAP.46.L1206

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