Jpn. J. Appl. Phys. 46 (2007) pp. L1209-L1211  |Previous Article| |Next Article|  |Table of Contents|
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Letter

Nanosecond Response Found in Photoexcited Surface Carriers Generated by CoSi_x Nanoparticles on Si Substrate

Takanari Yasui, Hirokazu Nakanishi, Takayuki Makino¹, and Yoshihiro Takagi¹

(Received September 28, 2007; accepted November 1, 2007; published online December 7, 2007)

We have found photovoltaic carriers generated by CoSi_x nanoparticles (about 10 nm in radius) fabricated on a Si substrate when the illuminated spot was separated by 1 mm from the anode. The CoSi_x/Si system provided a sensitivity of 420 mA/W under CW laser excitation at 635 nm with an incident power of 1.8 mW. The carrier's response time of <10 ns was observed under pulsed (picosecond) laser excitation. These high-speed carriers were isolated from the Si substrate, as observed from the ∼15 ns delayed peak. These results suggest that the carriers photoinduced from the CoSi_x nanoparticles are surface conductive and have high mobility comparable to that of thermal emission electrons.

URL: http://jjap.jsap.jp/link?JJAP/46/L1209/
DOI: 10.1143/JJAP.46.L1209

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