Jpn. J. Appl. Phys. 46 (2007) pp. L187-L189  |Next Article|  |Table of Contents|
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Express Letter

Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes

Kuniyoshi Okamoto, Hiroaki Ohta, Shigefusa F. Chichibu1, Jun Ichihara, and Hidemi Takasu

Research and Development Headquarters, ROHM Co., Ltd., Kyoto 615-8585, Japan
1Institute of Applied Physics and 21st Century Center-of-Excellence Office, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

(Received February 4, 2007; accepted February 6, 2007; published online February 23, 2007)

Continuous-wave (CW) operation of nonpolar m-plane InGaN/GaN laser diodes (LDs) with the lasing wavelengths approximately 400 nm was demonstrated. The threshold current was 36 mA (4.0 kA/cm2) for the CW operation [28 mA (3.1 kA/cm2) for pulsed mode], being comparable to that of conventional c-plane violet LDs. Both the LDs with the stripes parallel to a- and c-axes showed TE mode operation, according to the polarization selection rules of the transitions in strained InGaN. The c-axis stripe LDs exhibited lower threshold current density, since the lowest energy transition is allowed. As is the case with the m-plane light emitting diodes fabricated on the free-standing m-plane GaN bulk crystals [Okamoto et al.: Jpn. J. Appl. Phys. 45 (2006) L1197], the LDs shown in this paper did not have distinct dislocations, stacking faults, or macroscopic cracks. Nonpolar m-plane GaN-based materials are coming into general use.

URL: http://jjap.jsap.jp/link?JJAP/46/L187/
DOI: 10.1143/JJAP.46.L187


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References | Citing Articles (95)

  1. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai: Jpn. J. Appl. Phys. 34 (1995) 1332[JSAP].
  2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto: Jpn. J. Appl. Phys. 35 (1996) L74[JSAP].
  3. S. Nakamura, M. Senoh, S. Nagahama, N. Iwase, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho: Appl. Phys. Lett. 72 (1998) 2014[AIP Scitation].
  4. T. Tojyo, T. Asano, M. Takeya, T. Hino, S. Kijima, S. Goto, S. Uchida, and M. Ikeda: Jpn. J. Appl. Phys. 40 (2001) 3206[JSAP].
  5. S. Nakamura, S. Pearton, and G. Fasol: The Blue Laser Diode (Springer-Verlag, Berlin, 2000) 2nd ed.
  6. S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura: Appl. Phys. Lett. 69 (1996) 4188[AIP Scitation].
  7. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki: Jpn. J. Appl. Phys. 36 (1997) L382[JSAP].
  8. F. Bernardini, V. Fiorentini, and D. Vanderbilt: Phys. Rev. B 56 (1997) R10024[APS].
  9. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog: Nature (London) 406 (2000) 865[CrossRef].
  10. H. M. Ng: Appl. Phys. Lett. 80 (2002) 4369[AIP Scitation].
  11. E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, G. Simin, M. A. Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai: Appl. Phys. Lett. 81 (2002) 4130[AIP Scitation].
  12. M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars: Jpn. J. Appl. Phys. 42 (2003) L235[JSAP].
  13. Y. J. Sun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck: Phys. Rev. B 67 (2003) 041306[APS].
  14. M. D. Craven, P. Waltereit, J. S. Speck, and S. P. DenBaars: Appl. Phys. Lett. 84 (2004) 496[AIP Scitation].
  15. Y. Narukawa, J. Narita, T. Sakamoto, K. Deguchi, T. Yamada, and T. Mukai: Jpn. J. Appl. Phys. 45 (2006) L1084[JSAP].
  16. B. A. Haskell, T. J. Baker, M. B. McLaurin, F. Wu, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura: Appl. Phys. Lett. 86 (2005) 111917[AIP Scitation].
  17. T. Nagai, T. Kawashima, K. Nakano, M. Imura, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki: Proc. 13th Int. Symp. MOVPE-XIII, 2006, p. 278.
  18. N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Kramers: Appl. Phys. Lett. 86 (2005) 111101[AIP Scitation].
  19. A. Chakraborty, B. A. Haskell, H. S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra: Jpn. J. Appl. Phys. 44 (2005) L173[JSAP].
  20. A. Chakraborty, B. A. Haskell, H. S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra: Jpn. J. Appl. Phys. 45 (2006) 739[JSAP].
  21. M. Funato, M. Ueda, Y. Kawakami, Y. Narukawa, T. Kosugi, M. Takahashi, and T. Mukai: Jpn. J. Appl. Phys. 45 (2006) L659[JSAP].
  22. K. Okamoto, H. Ohta, D. Nakagawa, M. Sonobe, J. Ichihara, and H. Takasu: Jpn. J. Appl. Phys. 45 (2006) L1197[JSAP].
  23. S. Ghosh, P. Waltrereit, O. Brandt, H. T. Grahn, and K. H. Ploog: Phys. Rev. B 65 (2002) 075202[APS].
  24. H. Masui, A. Chakraborty, B. A. Haskell, J. S. Speck, U. K. Mishra, S. Nakamura, and S. P. DenBaars: Jpn. J. Appl. Phys. 44 (2005) L1329[JSAP].

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