Jpn. J. Appl. Phys. 46 (2007) pp. L284-L286 |Previous Article| |Next Article| |Table of Contents|
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Express Letter
AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes
Daniel F. Feezell,
Mathew C. Schmidt,
Robert M. Farrell,
Kwang-Choong Kim,
Makoto Saito,
Kenji Fujito1,
Daniel A. Cohen,
James S. Speck,
Steven P. DenBaars, and
Shuji Nakamura
Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
1Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan
(Received February 27, 2007; accepted March 9, 2007; published online March 23, 2007)
We demonstrate highly manufacturable nonpolar (m-plane) InGaN/GaN laser diodes without any Al-containing waveguide cladding layers. These devices utilize thick InGaN quantum wells to generate transverse optical mode confinement and can be grown and fabricated in a manner analogous to InGaN/GaN light emitting diodes. Pulsed lasing operation was demonstrated, with threshold voltages and current densities of 6.7 V and 3.7 kA/cm2, respectively.
URL:
http://jjap.jsap.jp/link?JJAP/46/L284/
DOI: 10.1143/JJAP.46.L284
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