Jpn. J. Appl. Phys. 46 (2007) pp. L503-L505 |Next Article| |Table of Contents|
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Express Letter
A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
Masakazu Kanechika,
Masahiro Sugimoto1,
Narumasa Soejima,
Hiroyuki Ueda,
Osamu Ishiguro,
Masahito Kodama,
Eiko Hayashi,
Kenji Itoh,
Tsutomu Uesugi, and
Tetsu Kachi
Toyota Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japan
1Toyota Motor Corp., 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309, Japan
(Received April 17, 2007; accepted May 10, 2007; published online May 25, 2007)
We fabricated a vertical insulated gate AlGaN/GaN heterojunction field-effect transistor (HFET), using a free-standing GaN substrate. This HFET has apertures through which the electron current vertically flows. These apertures were formed by dry etching the p-GaN layer below the gate electrodes and regrowing n--GaN layer without mask. The HFET exhibited a specific on-resistance of as low as 2.6 mΩ·cm2 with a threshold voltage of -16 V. This HFET would be a prototype of a GaN-based high-power switching device.
URL:
http://jjap.jsap.jp/link?JJAP/46/L503/
DOI: 10.1143/JJAP.46.L503
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