Jpn. J. Appl. Phys. 46 (2007) pp. L617-L619 |Previous Article| |Next Article| |Table of Contents|
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InP/InGaAs Hot Electron Transistors with Insulated Gate
1Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
2CREST, Japan Science and Technology Agency, 4-1-8 Honmachi, Kawaguchi, Saitama 332-0012, Japan
3Quantum Nanoelectronics Research Center (QNERC), Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
(Received March 9, 2007; accepted May 18, 2007; published online June 22, 2007)
Elimination of the base layer in conventional hot electron transistor has possibility to minimize the scattering in the propagation. In previous study, we fabricated InP/InGaAs hot electron transistors without a doped layer in the propagation region by fabricating a 25-nm-wide emitter and Schottky gate electrodes located at both sides of an emitter mesa. However, there were some problems in fabricated device. To solve these observed problems, we proposed and fabricated a new structure with hot electrons propagating only in the intrinsic semiconductor. An insulated gate was introduced in hot electron transistors, in which hot electrons are propagated only in the intrinsic region after extraction from a heterostructure launcher. Clear collector current modulation by the insulated gate and a current density of 160 kA/cm2 were confirmed.
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