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Jpn. J. Appl. Phys. 46 (2007) pp. L761-L763  |Next Article|  |Table of Contents|
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Express Letter

Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes

Robert M. Farrell^1,3, Daniel F. Feezell^1,2, Mathew C. Schmidt^1,2, Daniel A. Haeger¹, Kathryn M. Kelchner^1,3, Kenji Iso^1,2, Hisashi Yamada^1,2, Makoto Saito^1,2, Kenji Fujito⁴, Daniel A. Cohen^1,2, James S. Speck^1,2, Steven P. DenBaars^1,2,3, and Shuji Nakamura^1,2,3

¹Solid State Lighting and Display Center, University of California, Santa Barbara, CA 93106, U.S.A.
²Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.
³Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
⁴Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan

(Received July 16, 2007; accepted July 24, 2007; published online August 10, 2007)

We demonstrate continuous-wave (CW) operation of nonpolar m-plane InGaN/GaN laser diodes without Al-containing waveguide cladding layers. Thick InGaN quantum wells (QWs) are used to generate effective transverse optical mode confinement, eliminating the need for Al-containing waveguide cladding layers. Peak output powers of more than 25 mW are demonstrated with threshold current densities and voltages of 6.8 kA/cm² and 5.6 V, respectively. The unpackaged and uncoated laser diodes operated under CW conditions for more than 15 h.

URL: http://jjap.jsap.jp/link?JJAP/46/L761/
DOI: 10.1143/JJAP.46.L761

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