Jpn. J. Appl. Phys. 46 (2007) pp. L966-L969 |Previous Article| |Next Article| |Table of Contents|
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Express Letter
Quantum Dot Activated All-inorganic Electroluminescent Device Fabricated Using Solution-Synthesized CdSe/ZnS Nanocrystals
Satoshi Kobayashi,
Yuki Tani, and
Hiroshi Kawazoe
R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima, Tokyo 196-8510, Japan
(Received August 21, 2007; accepted September 27, 2007; published online October 12, 2007)
We report a low temperature fabrication and light-emitting characteristics of inorganic electroluminescent (EL) devices in which a CdSe/ZnS quantum dot (QD) layer was formed by a new ion beam deposition process. The deposition process was developed for fabrication of surfactant- and solvent-free QD structured films from colloidally dispersed QD solution. The electroluminescence spectra of the alternating field driven devices were found to be identical to the photoluminescence spectra of the source solution. The finding paves the way for the development of full color, transparent, flexible, and low-cost large area flat panel displays.
URL:
http://jjap.jsap.jp/link?JJAP/46/L966/
DOI: 10.1143/JJAP.46.L966
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