Jpn. J. Appl. Phys. 47 (2008) pp. 108-112  |Previous Article| |Next Article|  |Table of Contents|
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Effect of Corrosion Inhibitor, Benzotriazole, in Cu Slurry on Cu Polishing

In-Kwon Kim, Young-Jae Kang, Tae-Gon Kim, and Jin-Goo Park

(Received March 29, 2007; accepted September 17, 2007; published online January 18, 2008)

In this study, the effect of benzotriazole (BTA) in Cu slurry on Cu polishing behavior was investigated as functions of H₂O₂ and slurry pH. The addition of BTA to slurry effectively prevented Cu from being etched by forming a passivation layer of Cu–BTA regardless of pH and H₂O₂ concentration in the slurry. The passivation layer on the Cu wafer exhibited a contact angle of 50° in solution with BTA and H₂O₂. The dynamic etching rate, i.e., the Cu polishing rate using abrasive-free slurry, also decreased when BTA was added to the slurry at pH 2, 4, and 6. The removal rate of Cu in slurry without BTA was strongly dependent on H₂O₂ concentration and pH. In slurry with BTA, Cu–BTA on the Cu surface prevented the etching of Cu. At pH 2 and 4, the removal rates were lower in slurry with BTA than in slurry without BTA. However, slurries of pH 6 or higher with BTA showed higher removal rates at higher concentrations of H₂O₂ than 10%, which was explained by the thick passivating oxide layer formed at higher pH and H₂O₂ concentrations.

URL: http://jjap.jsap.jp/link?JJAP/47/108/
DOI: 10.1143/JJAP.47.108

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