Jpn. J. Appl. Phys. 47 (2008) pp. 1259-1262 |Previous Article| |Next Article| |Table of Contents|
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Effect of Ferroelectric/Metal Interface Structure on Polarization Reversal
Satoshi Horie,
Kenji Ishida1,
Shuichiro Kuwajima2,
Kei Kobayashi3,
Hirofumi Yamada, and
Kazumi Matsushige
Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510, Japan
1Department of Chemical Science and Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan
2Nano-Medicine Merger Education Unit, Department of Microengineering, Kyoto University, Yoshida, Sakyo, Kyoto 606-8501, Japan
3International Innovation Center, Kyoto University, Katsura, Nishikyo, Kyoto 615-8520, Japan
(Received April 16, 2007; accepted October 5, 2007; published online February 15, 2008)
The ferroelectric behaviors of vinylidene fluoride (VDF) oligomer thin films deposited on various bottom electrode materials (i.e., Au, Pt, Al, Al2O3/Al, and Al2O3/Au) were investigated. The coercive electric fields and full width at half maximum (FWHM) of the switching current peak of VDF oligomer thin films on the Au and Pt bottom electrodes were respectively lower and narrower than those of Al. These results indicate that the native oxide layer Al2O3 on the Al electrode surface works as a linear capacitor on ferroelectric capacitors. However, ferroelectric capacitors using Au and Pt bottom electrodes have the tendency to easily break down with the sudden application of an electric field. Their polarization switching and fatigue lifetime are affected by electrode material and the ferroelectric/metal interface.
URL:
http://jjap.jsap.jp/link?JJAP/47/1259/
DOI: 10.1143/JJAP.47.1259
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