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Jpn. J. Appl. Phys. 47 (2008) pp. 1553-1555  |Previous Article| |Next Article|  |Table of Contents|
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AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity

Kai Cheng1,2, Maarten Leys1, Stefan Degroote1, Joff Derluyn1, Brian Sijmus1, Paola Favia3, Olivier Richard3, Hugo Bender3, Marianne Germain1, and Gustaaf Borghs1,4

1NEXT, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
2ESAT, Department of Electrical Engineering, Katholieke Universiteit Leuven, BE-3000 Leuven, Belgium
3MCASA, IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
4Department of Physics, Katholieke Universiteit Leuven, BE-3000 Leuven, Belgium

(Received August 8, 2007; revised October 25, 2007; accepted December 7, 2007; published online March 14, 2008)

AlGaN/GaN high electron mobility transistors (HEMTs) grown on 150 mm Si(111) substrates are reported in this work. The sheet resistance of the AlGaN/GaN HEMT structure is as low as 260 ±3.4 Ω/\square. The electron mobility is in the range of 1560–1650 cm2 V-1 s-1. The crack-free mirror-like wafers were obtained by using a simple AlGaN/AlN buffer. The mechanism for dislocation reduction in GaN above the AlGaN/AlN buffer is presented in this work. The dislocation density is around (1.5–2.5)×109/cm2. Some of the wafers were processed and a current density close to 1 A/mm was achieved. The maximum transconductance was 270 mS/mm and the on-state resistance was as low as 2.6 Ω mm.

URL: http://jjap.jsap.jp/link?JJAP/47/1553/
DOI: 10.1143/JJAP.47.1553
KEYWORDS:III–nitride, GaN, HEMT, silicon substrate


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