Quick Search: Journal  Author  Title/Abstract  Vol./Year 

Jpn. J. Appl. Phys. 47 (2008) pp. 226-230  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (270K)| |Buy This Article|

Argon Plasma Beam Scanning Processes on Polyimide Films for Liquid Crystal Alignment

Chin-Yang Lee, Yu-Lien Liu, Kuen Yi Wu1, Ming-Yu Chen1, and Jenn-Chang Hwang1

Mechanical and System Research Laboratories, ITRI, Chutung, Hsin-Chu, Taiwan
1Department of Materials Science and Engineering, National Tsing Hua University, Hsin-Chu, Taiwan

(Received July 30, 2007; accepted October 19, 2007; published online January 18, 2008)

Argon (Ar) plasma beam scanning treatments were applied to modify the surfaces of polyimide (PI) films deposited on indium tin oxide glasses in favor of liquid crystal (LC) alignment. LC cells were filled with twist nematic LC (ZLI-2293) on the PI films (Chisso 5310) treated with Ar plasma beam scanning. LC alignment occurs for the as-scanned PI films. The modifications of the PI films were characterized by using atomic force microscope and X-ray photoemission spectroscopy. The grooving mechanism is considered not responsible for the LC alignment. The C 1s, N 1s, and O 1s core level spectra support that Ar plasma beam scanning can induce a bond-breaking process of C=O bonds to create available carbon dangling bonds for the re-formation of C–O bonds. A dipole field is generated through the re-formation of C–O bonds, which may favor the LC alignment via the dipole–dipole interaction.

URL: http://jjap.jsap.jp/link?JJAP/47/226/
DOI: 10.1143/JJAP.47.226


|Full Text PDF (270K)| |Buy This Article| Citation:

References | Citing Articles (23)

  1. D. W. Berreman: Phys. Rev. Lett. 28 (1972) 1683[APS].
  2. D. W. Berreman: Mol. Cryst. Liq. Cryst. 23 (1973) 187[CrossRef].
  3. S. Kobayashi and Y. Iimura: Proc. SPIE 2175 (1994) 122[AIP Scitation].
  4. H. Matsuda, D.-S. Seo, N. Yoshida, K. Fujibayashi, and S. Kobayashi: Mol. Cryst. Liq. Cryst. 264 (1995) 23[CrossRef].
  5. S.-C. A. Lien, P. Chaudhari, J. A. Lacey, R. A. John, and J. L. Speidell: IBM J. Res. Dev. 42 (1998) 537.
  6. J. S. Gwag, C. G. Jhun, J. C. Kim, and T.-H. Yoon: J. Appl. Phys. 96 (2004) 257[AIP Scitation].
  7. D. Dantsker, J. Kumar, and S. K. Tripathy: J. Appl. Phys. 89 (2001) 4318[AIP Scitation].
  8. X. Lu, Q. Lu, Z. Zhu, J. Yin, and Z. Wang: Chem. Phys. Lett. 377 (2003) 433[CrossRef].
  9. D.-S. Seo, H.-K. Kim, and H.-J. Jeon: Liq. Cryst. 28 (2001) 313.
  10. P. Chaudhari, J. Lacey, J. P. Doyle, E. Galiggan, S. C. Lien, A. C. Callegari, G. Hougham, N. D. Lang, P. S. Andry, R. John, K. H. Yang, C. Cai, J. L. Speidell, S. Purushothaman, J. Ritsko, M. G. Samant, J. Stohr, Y. Nakagawa, Y. Katoh, Y. Saitoh, K. Sakai, H. Satoh, S. Odahara, H. Nakano, J. Nakagaki, and Y. Shiota: Nature 411 (2001) 56[CrossRef].
  11. P. Chaudhari, J. A. Lacey, S.-C. A. Lien, and J. L. Speidell: Jpn. J. Appl. Phys. 37 (1998) L55[JSAP].
  12. O. V. Yaroshchuk, Yu. Zakrevskyy, A. Dobrovolskyy, and S. Pavlov: Proc. SPIE 4418 (2001) 49[AIP Scitation].
  13. O. Yaroshchuk, R. Kravchuk, A. Dobrovolskyy, L. Qiu, and O. D. Lavrentovich: Liq. Cryst. 31 (2004) 859.
  14. K. Y. Wu, C.-H. Chen, C.-M. Yeh, J. Hwang, P.-C. Liu, C.-Y. Lee, C.-W. Chen, H. K. Wei, C. S. Kou, and C.-D. Lee: J. Appl. Phys. 98 (2005) 083518[AIP Scitation].
  15. K. Y. Wu, S. J. Chang, J. Hwang, C.-Y. Lee, H.-C. Tang, C.-W. Chen, C. H. Liu, H. K. Wei, C. S. Kou, and C.-D. Lee: J. Appl. Phys. 101 (2007) 023531[AIP Scitation].
  16. S. Ishihara: J. Disp. Technol. 1 (2005) 30.
  17. S. Ishihara, H. Wakemoto, K. Nakazima, and Y. Matsuo: Liq. Cryst. 4 (1989) 669.
  18. J. Stohr, M. G. Samant, J. Luning, A. C. Callegari, P. Chaudhari, J. A. Lacey, S. A. Lien, S. Purushothaman, and J. L. Speidell: Science 292 (2001) 2299[Science].
  19. T. Sakuhara, E. Tomita, H. Nakahara, and K. Fukuda: Thin Solid Films 209 (1992) 269[CrossRef].
  20. M. Lu: Jpn. J. Appl. Phys. 43 (2004) 8156[JSAP].
  21. K. C. Kim, H. J. Ahn, J. B. Kim, B. H. Hwang, and H. K. Baik: Langmuir 21 (2005) 11079.
  22. E. Jang, H. Song, and S.-D. Lee: Jpn. J. Appl. Phys. 45 (2006) L1238[JSAP].
  23. T. J. Scheffer and J. Nehring: J. Appl. Phys. 48 (1977) 1783[AIP Scitation].
  24. K. Shirota, M. Yaginuma, K. Ishikawa, H. Takezoe, and A. Fukuda: Jpn. J. Appl. Phys. 34 (1995) 4905[JSAP].
  25. Handbook of X-ray Photoelectron Spectroscopy (Perkin-Elmer, Foster City, CA, 1992) p. 216.
  26. P. Merel, M. Tabbal, M. Chaker, S. Moisa, and J. Margot: Appl. Surf. Sci. 136 (1998) 105[CrossRef].
  27. A. M. Ektessabi and S. Hakamata: Thin Solid Films 377–378 (2000) 621[CrossRef].
  28. CRC Handbook of Chemistry and Physics (CRC Press, Boca Raton, FL, 2002–03) 83rd ed., p. 9-53.
|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information