Jpn. J. Appl. Phys. 47 (2008) pp. 2388-2397  |Previous Article| |Next Article|  |Table of Contents|
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Substrate Orientation Dependent Suppression of NiSi Induced Junction Leakage by Fluorine and Nitrogen Incorporation

Masakatsu Tsuchiaki and Akira Nishiyama

(Received September 20, 2007; revised November 29, 2007; accepted January 15, 2008; published online April 25, 2008)

Using n+/p junctions formed by solid-phase diffusion, the efficacy of pre-silicide ion implantation (PSII) of fluorine and nitrogen on Si(110) for suppressing thermally induced leakage through NiSi-silicided shallow diodes is thoroughly examined in full contrast with Si(100). Unlike Si(100), N-PSII's efficiency improves on Si(110) over F-PSII. Furthermore, whereas in-film F has no ability to reduce leakage, in-film N suppresses leakage. Thus, N-PSII's leakage suppression is speculated to be mainly due to stabilization by N of abundant grain boundaries of highly oriented and finely structured NiSi films on Si(110), whereas leakage reduction by F-PSII is attained primarily by passivating the incoherent and unstable NiSi/Si(100) interface. From a practical point of view, in-film N incorporation offers a useful and complementary means of leakage suppression on Si(110) besides F-PSII, without any disturbance in contact resistance. Considering the vulnerability of Si(110) to light ion channeling, the best way to suppress leakage on a hybrid orientation substrate is a low-dose or selective F-PSII just prior to silicidation for Si(100), complemented by damage-free N doping or high-dose N-PSII together with source/drain implantation for Si(110).

URL: http://jjap.jsap.jp/link?JJAP/47/2388/
DOI: 10.1143/JJAP.47.2388

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