Jpn. J. Appl. Phys. 47 (2008) pp. 2464-2467  |Table of Contents|
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Novel Contact-Plug Process with Low-Resistance Nucleation Layer Using Diborane-Reduction Tungsten Atomic-Layer-Deposition Method for 32 nm Complementary Metal–Oxide–Semiconductor Devices and Beyond

Akie Yutani, Kazuhito Ichinose, Kazuyoshi Maekawa, Koyu Asai, and Masayuki Kojima

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