Jpn. J. Appl. Phys. 47 (2008) pp. 2496-2500 |Previous Article| |Next Article| |Table of Contents|
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Channel Strain in Advanced Complementary Metal–Oxide–Semiconductor Field Effect Transistors Measured Using Nano-Beam Electron Diffraction
Device Platforms Research Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1189, Japan
1Advanced Device Development Division, NEC Electronics Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1189, Japan
(Received October 1, 2007; accepted November 22, 2007; published online April 25, 2008)
Using high-precision nano-beam electron diffraction (NBD), we clarified the influences of stress liner and the stress of shallow trench isolation on channel strain in advanced metal–oxide–semiconductor field effect transistors (MOSFETs). For systematic strain measurements, we improved the precision of NBD by observing large reciprocal lattice vectors under appropriate diffraction conditions. The absolute value of the channel strain increases by stress liner as gate length decreases, although the drive current increase due to stress liner saturates at a shorter channel length. The normal strain in the gate length direction is inversely proportional to the distance from the gate electrode to the shallow trench isolation (STI). Furthermore, the relationship between measured channel strain induced by STI and drive current change was shown. The drive current of n- and p-MOSFET changes about 5% with 2×10-3 channel strain variation. This result suggests that reducing the shallow trench isolation stress is effective for controlling the drive current change, depending on the active region layout. We conclude that the experimental measurement of channel strain is necessary for device and circuit design.
KEYWORDS:nano-beam electron diffraction, strain measurements, advanced MOSFET, channel strain, drive current change, stress liner, STI stress
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