Jpn. J. Appl. Phys. 47 (2008) pp. 347-350  |Previous Article| |Next Article|  |Table of Contents|
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Gas-Assisted Focused Ion Beam Etching of Indium–Tin Oxide Film

Ming-Kwei Lee and Kwei-Kuan Kuo

(Received July 5, 2007; revised October 4, 2007; accepted October 16, 2007; published online January 18, 2008)

Gas-assisted focused ion beam etching is a very useful extension of the focused ion beam technique. In this study, gas-assisted focused ion beam etching is performed on indium–tin oxide (ITO) films using the halide gases xenon difluoride and iodine. The results from this study show that higher etching rates of ITO films may be obtained using xenon difluoride gas at a short beam dwelling time and a negative beam overlap percentage. They also show that gas-assisted focused ion beam etching has several advantages over physical sputtering in focused ion beam milling: increase in etching rate, minimization of redeposition on sidewalls, and minimization of ion implantation in samples.

URL: http://jjap.jsap.jp/link?JJAP/47/347/
DOI: 10.1143/JJAP.47.347

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