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Jpn. J. Appl. Phys. 47 (2008) pp. 400-402  |Previous Article| |Next Article|  |Table of Contents|
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Influence of Substrate Structure on Resistance Switch Using Simple Metal Nanogap Junction

Yasuhisa Naitoh^1,2, Masayo Horikawa¹, and Tetsuo Shimizu¹

¹Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8562, Japan
²Precursory Research for Embryonic Science and Technology, Japan Science and Technology Agency, 3-5 Sanbancyo, Chiyoda-ku, Tokyo 102-0075, Japan

(Received July 20, 2007; accepted October 21, 2007; published online January 18, 2008)

A nonvolatile resistance hysteresis is observed in the current–voltage (I–V) characteristics of gold nanogap junctions when pulse bias voltages are applied. In order to discuss the influence of substrates on this resistance change, the I–V characteristics of a gold nanogap junction under which a SiO₂ substrate was etched were evaluated. The I–V characteristics show a similar resistance hysteresis to that on a nanogap junction without etching. The results indicate that substrate structure has almost no influence on the resistance hysterisis. Therefore, it is concluded that these nonvolatile resistance changes occur as a result of changes in only metal electrode parts.

URL: http://jjap.jsap.jp/link?JJAP/47/400/
DOI: 10.1143/JJAP.47.400

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References | Citing Articles (2)

1. R. F. Service: Science 302 (2003) 556[Science].
2. V. V. Zhirnov and R. K. Cavin: Nat. Mater. 5 (2006) 11[CrossRef].
3. Y. Naitoh, M. Horikawa, H. Abe, and T. Shimizu: Nanotechnology 17 (2006) 5669[IoP STACKS].
4. Y. Naitoh, K. Tukagoshi, K. Murata, and W. Mizutani: e-J. Surf. Sci. Nanotechnol. 1 (2003) 41.
5. Y. Naitoh, T. T. Liang, H. Azehara, and W. Mizutani: Jpn. J. Appl. Phys. 44 (2005) L472[JSAP].

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