Jpn. J. Appl. Phys. 47 (2008) pp. 4007-4010  |Previous Article| |Next Article|  |Table of Contents|
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Development of an X-Band Filter Using Air-Gap-Type Film Bulk Acoustic Resonators

Masanori Ueda1,3, Motoaki Hara1, Shinji Taniguchi2, Tsuyoshi Yokoyama1, Tokihiro Nishihara2, Ken-ya Hashimoto3, and Yoshio Satoh1

1Fujitsu Limited, Akashi, Hyogo 674-8555, Japan
2Fujitsu Laboratories Ltd., Akashi, Hyogo 674-8555, Japan
3Graduate School of Engineering, Chiba University, Chiba 263-8522, Japan

(Received November 20, 2007; accepted January 15, 2008; published online May 23, 2008)

We have developed an X-band filter utilizing air-gap-type film bulk acoustic resonators (FBARs). The air-gap structure is simple and cost-effective. Results from both simulations and experiments demonstrate that a dome-shaped air gap was formed between the substrate surface and the bottom electrode and that an air-gap-type FBAR structure was possible. The air gap can be formed on the flat substrate using stress control of piezoelectric and metal films without using a thick sacrificial layer. As a result, the fabricated X-band FBAR operated successfully with a keff2 of 6.30%, a resonance Q of 246, and an antiresonance Q of 462. The fabricated filter had a center frequency of 9.07 GHz, a fractional bandwidth of 3.1% and a minimum insertion loss of 1.7 dB.

URL: http://jjap.jsap.jp/link?JJAP/47/4007/
DOI: 10.1143/JJAP.47.4007


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