Jpn. J. Appl. Phys. 47 (2008) pp. 4436-4440 |Previous Article| |Next Article| |Table of Contents|
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A Physical Model with the Effects of Self-Heating and Variable Resistance in Above-Threshold Region for Hydrogenated Amorphous Silicon Thin Film Transistor
Institute of Microelectronics, South China University of Technology, Guangzhou 510640, China
(Received October 27, 2007; revised January 8, 2008; accepted February 8, 2008; published online June 13, 2008)
A physical model that includes the effects of self-heating and variable resistance in the above-threshold region is presented for hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs). The self heating effect is due to the low thermal conductivity of the gate insulator and the glass substrate. In order to predict the temperature rise as a function of device dimensions and material parameters, a steady-state thermal model derived from a system of coupled one-dimensional (1-D) energy equations and boundary conditions is presented. Then the developed thermal model is applied to study the self-heating effect in the a-Si:H TFT. In addition, the bulk resistance is decreased due to the the mechanism of space charge limited conduction in a n+–i–n+ structure. By considering both the effects of self-heating and variable resistance, a physical model in the above-threshold region has been developed. Using this model, the non-saturating output current and kink effects can be accurately described for a typical a-Si:H TFT. The accuracy of the proposed model has been verified with the experimental data.
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