Jpn. J. Appl. Phys. 47 (2008) pp. 4491-4493  |Previous Article| |Next Article|  |Table of Contents|
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Communication

Stacking Fault Duplication in 6H-SiC Single Crystal

Bo-Yuan Chen^1,2, Er-Wei Shi¹, Zhi-Zhan Chen¹, Xiang-Biao Li^1,2, and Bing Xiao¹

(Received July 17, 2007; revised September 4, 2007; accepted November 27, 2007; published online June 13, 2008)

6H-SiC single crystal was grown by physical vapor transport (PVT). The duplications of several types of stacking fault (SF) such as SF<24>, SF<15>, and SF<3111> were observed by high-resolution transmission electron microscopy (HRTEM). First-principle calculations revealed that the formation energies of single SF<24> and SF<15> are very low while that of SF<3111> is much higher. Further calculations demonstrated that the continuous SFs possessed larger stress along the c-axis than the separated SFs. This suggests that the stress should be the reason for the SF duplication, and the SF can be duplicated under higher c-axis stress.

URL: http://jjap.jsap.jp/link?JJAP/47/4491/
DOI: 10.1143/JJAP.47.4491

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