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Communication
Improvement of Material Quality of Multijunction Solar Cells by Rapid Thermal Annealing
Min-De Yang,
Yu-Kai Liu,
Ji-Lin Shen, and
Chih-Hung Wu1
Physics Department, Chung Yuan Christian University, Chungli 320, Taiwan
1Institute of Nuclear Energy Research, P. O. Box 3-11, Lungtan 32500, Taiwan
(Received January 8, 2008; revised February 6, 2008; accepted February 14, 2008; published online June 13, 2008)
We studied the CW and time-resolved photoluminescence (PL), and spectral response of three-junction InGaP/InGaAs/Ge solar cells following rapid thermal annealing (RTA). The improvement of material quality in the InGaP active layer after RTA is evident from the PL and spectral response. If the annealing temperature is 300 °C, the 10 K PL intensity is maximum, which increases by about a factor of 30 compared with that of the untreated sample. We suggest that the removal of the phosphorus-vacancy-related complexes is responsible for improvement of the material quality after RTA. The photocurrent of the cell also increases following RTA if the incident photon energy is greater than ∼1.8 eV.
URL:
http://jjap.jsap.jp/link?JJAP/47/4499/
DOI: 10.1143/JJAP.47.4499
- O. Korech, B. Hirsch, E. A. Katz, and J. M. Gordon:
Appl. Phys. Lett. 91 (2007) 064101[AIP Scitation].
- C. G. Zimmermann:
J. Appl. Phys. 100 (2006) 023714[AIP Scitation].
- T. Takamoto, E. Ikeda, H. Kurita, and M. Ohmori:
Appl. Phys. Lett. 70 (1997) 381[AIP Scitation].
- M. Zazoui and J. C. Bourgoin:
Appl. Phys. Lett. 80 (2002) 4455[AIP Scitation].
- M. Yamaguchi: Sol. Energy Mater. Sol. Cells 75 (2003) 261.
- R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam:
Appl. Phys. Lett. 90 (2007) 183516[AIP Scitation].
- M.-J. Yang, M. Yamaguchi, T. Takamoto, E. Ikeda, H. Kurita, and M. Ohmori: Sol. Energy Mater. Sol. Cells 45 (1997) 331.
- M. D. Abbott, J. E. Cotter, F. W. Chen, T. Trupke, R. A. Bardos, and K. C. Fisher:
J. Appl. Phys. 100 (2006) 114514[AIP Scitation].
- K. Takahashi, S. Yamada, R. Nakazono, Y. Minagawa, T. Matsuda, T. Unno, and S. Kuma: Sol. Energy Mater. Sol. Cells 50 (1998) 273.
- W. K. Metzger, D. Albin, D. Levi, P. Sheldon, X. Li, B. M. Keyes, and R. K. Ahrenkiel:
J. Appl. Phys. 94 (2003) 3549[AIP Scitation].
- S. R. Kurtz, A. A. Allerman, E. D. Jones, J. M. Gee, J. J. Banas, and B. E. Hammons:
Appl. Phys. Lett. 74 (1999) 729[AIP Scitation].
- C. J. Bridge, P. Dawson, P. D. Buckle, and M. E. Özsan:
J. Appl. Phys. 88 (2000) 6451[AIP Scitation].
- X. Wang, S. S. Li, W. K. Kim, S. Yoon, V. Craciun, J. M. Howard, S. Easwaran, O. Manasreh, O. D. Crisalle, and T. J. Anderson: Sol. Energy Mater. Sol. Cells 90 (2006) 2855.
- M. Yamaguchi, T. Takamoto, A. Khan, M. Imaizumi, S. Matsuda, and N. J. Ekins-Daukes: Prog. Photovoltaics 13 (2005) 125.
- T. Soga, T. Kato, M. Umeno, and T. Jimeo:
J. Appl. Phys. 79 (1996) 9375[AIP Scitation].
- J. Novák, S. Hasenöhrl, R. Kúdela, M. Kucera, M. I. Alonso, and M. Garriga: Mater. Sci. Eng. B 88 (2002) 139.
- M. A. Zaidi, M. Zazoui, and J. C. Bourgoin:
J. Appl. Phys. 73 (1993) 7229[AIP Scitation].
- S. Lan, C. Q. Yang, D. L. Cui, W. J. Xu, and H. D. Liu:
Appl. Phys. Lett. 66 (1995) 872[AIP Scitation].
- Z. C. Huang, C. R. Wie, J. A. Varriano, M. W. Koch, and G. W. Wicks:
J. Appl. Phys. 77 (1995) 1587[AIP Scitation].
- J. Dekker, M. Dumitrescu, A. Tukiainen, S. Orsila, P. Uusimaa, M. Pessa, N. V. Tkachenko, and H. Lemmetyinen:
J. Appl. Phys. 92 (2002) 173[AIP Scitation].
- J. E. Fouquet, V. M. Robbins, J. Rosner, and O. Blum:
Appl. Phys. Lett. 57 (1990) 1566[AIP Scitation].
- M. Sugisaki, H.-W. Ren, K. Nishi, S. Sugou, and Y. Masumoto:
Phys. Rev. B 61 (2000) 16040[APS].
- J. R. Dong, Z. G. Wang, X. L. Liu, D. C. Lu, D. Wang, and X. H. Wang:
Appl. Phys. Lett. 67 (1995) 1573[AIP Scitation].
