Jpn. J. Appl. Phys. 47 (2008) pp. 6307-6309 |Previous Article| |Next Article| |Table of Contents|
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Epitaxial Growth of Superconducting Eu2-xCexCuO4 Thin Films
Yoshiharu Krockenberger1,2,3,
Jose Kurian1,2,
Michio Naito4, and
Lambert Alff1
1Darmstadt University of Technology, Petersenstr. 23, D-64287 Darmstadt, Germany
2NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
3Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
4Tokyo University of Agriculture and Technology (TUAT), 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
(Received January 30, 2008; accepted April 26, 2008; published online August 8, 2008)
We have grown (00l)-oriented thin films of Eu2-xCexCuO4 on (001) SrTiO3 with cerium composition in the range 0≤x≤0.22 by reactive molecular beam epitaxy and characterized them by X-ray diffraction and transport measurements. A systematic change in the c-axis length upon cerium doping was observed indicating that single-phase films were obtained for the whole doping range up to the solubility limit at x=0.22. Superconductivity appeared within a cerium concentration of 0.14≤x≤0.19. Compared to other electron doped cuprates, the superconducting phase space and maximal critical temperature is reduced, and the point of optimal doping is shifted to a higher doping level.
URL:
http://jjap.jsap.jp/link?JJAP/47/6307/
DOI: 10.1143/JJAP.47.6307
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