Jpn. J. Appl. Phys. 47 (2008) pp. 7467-7469  |Previous Article| |Next Article|  |Table of Contents|
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Temperature Dependence of Release Effect for Antisticking Layer in Nanoimprint Characterized by Scanning Probe Microscopy

Makoto Okada1, Masayuki Iwasa2, Ken-ichiro Nakamatsu1,3, Noriko Yamada1, Kazuhiro Kanda1, Yuichi Haruyama1, and Shinji Matsui1

1Graduate School of Science, LASTI, University of Hyogo, 3-1-2 Koto, Kamigori, Hyogo 678-1205, Japan
2SII Nanotechnology Inc., RBM Tsukiji Building, 2-15-5 Shintomi, Chuo-ku, Tokyo 104-0041, Japan
3Japan Society for the Promotion Science, 6 Ichibancho, Chiyoda-ku, Tokyo 102-8471, Japan

(Received March 5, 2008; accepted April 30, 2008; published online September 12, 2008)

In nanoimprint lithography (NIL), molds are in direct contact with replication materials. Furthermore, the glass transition temperature is around 100–200 °C in thermal NIL. We examined the temperature dependence of a release effect for the antisticking layer of a self-assembled monolayer with a fluoropolymer by scanning probe microscopy (SPM). We measured the contact angle and frictional force of the antisticking layer with and without annealing. The contact angle decreases and the frictional force increases at annealing temperatures greater than 500 °C. We analyzed the chemical composition of the antisticking layer with and without annealing by X-ray photoelectron spectroscopy (XPS). From the obtained measurement results, the CF3 and CF2 peaks of the antisticking layer disappeared after annealing at temperatures greater than 500 °C. These results show that the antisticking layer annealed at temperatures less than 500 °C has a sufficient release effect.

URL: http://jjap.jsap.jp/link?JJAP/47/7467/
DOI: 10.1143/JJAP.47.7467


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References

  1. S. Y. Chou, P. R. Krauss, and P. J. Renstrom: Appl. Phys. Lett. 67 (1995) 3114[AIP Scitation].
  2. S. Y. Chou, P. R. Krauss, and P. J. Renstrom: Science 272 (1996) 85[Science].
  3. S. Y. Chou, P. R. Krauss, W. Zhang, L. Guo, and L. Zhuang: J. Vac. Sci. Technol. B 15 (1997) 2897[AIP Scitation].
  4. Y. Hirai, S. Yoshida, A. Okamoto, Y. Tanaka, M. Endo, S. Irie, H. Nakagawa, and M. Sasago: J. Photopolym. Sci. Technol. 14 (2001) 457.
  5. C. M. Mate, G. M. McClelland, R. Erlandsson, and S. Chiang: Phys. Rev. Lett. 59 (1987) 1942[APS].
  6. G. Mayer and N. M. Amer: Appl. Phys. Lett. 57 (1990) 2089[AIP Scitation].
  7. C. M. Mate, G. M. McClelland, R. Erlandsson, and S. Chiang: Phys. Rev. Lett. 59 (1987) 1942[APS].
  8. R. Erlandsson, G. Hadziioannou, C. M. Mate, G. M. McClelland, and S. Chiang: J. Chem. Phys. 89 (1988) 5190[AIP Scitation].

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