Jpn. J. Appl. Phys. 47 (2008) pp. 7486-7489  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (121K)| |Buy This Article|

Oxygen Sensing Properties of SrTiO3 Thin Films

Toru Hara, Takashi Ishiguro, Naoki Wakiya1, and Kazuo Shinozaki2

Development Planning Division, Taiyo Yuden Co., Ltd., 8-1 Sakae-cho, Takasaki, Gunma 370-8522, Japan
1Department of Materials Science, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan
2Department of Metallurgy and Ceramics Science, Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan

(Received April 17, 2008; accepted July 28, 2008; published online September 19, 2008)

The oxygen sensing properties of SrTiO3-based thin films have been investigated at room temperature. First, nondoped SrTiO3 was investigated. Although such a material is highly sensitive, its electrical resistance was too high and not feasible for practical use. Donor (Nb5+) could lower the resistance of SrTiO3; however, the sensitivity was lost. UV-light irradiation or t2-type acceptor (Cr3+) doping could lower the resistance and yet maintain the sensitivity. In contrast to t2-type acceptor doping, e-type acceptor (Fe3+) doping could lower the resistance; however, the sensitivity was lost. In this paper, we discuss the phenomena from the viewpoint of polaron-controlled carrier conduction.

URL: http://jjap.jsap.jp/link?JJAP/47/7486/
DOI: 10.1143/JJAP.47.7486
KEYWORDS:gas sensor, oxygen sensor, resistive sensor, SrTiO3 thin film, polaron


|Full Text PDF (121K)| |Buy This Article| Citation:


References | Citing Articles (13)

  1. T. Seiyama, A. Kato, K. Fujiishi, and M. Nagatani: Anal. Chem. 34 (1962) 1502.
  2. S. Wang, A. Kawase, and H. Ogawa: Jpn. J. Appl. Phys. 45 (2006) 7252[JSAP].
  3. K. Nishida, H. Kishi, H. Funakubo, H. Takeuchi, T. Katoda, and T. Yamamoto: Jpn. J. Appl. Phys. 46 (2007) 7005[JSAP].
  4. H. P. R. Frederikse, W. R. Thurber, and W. R. Hosler: Phys. Rev. 134 (1964) A442[APS].
  5. T. Tomio, H. Miki, H. Tabata, T. Kawai, and S. Kawai: J. Appl. Phys. 76 (1994) 5886[AIP Scitation].
  6. K. Fukushima and S. Shibagaki: Thin Solid Films 315 (1998) 238[CrossRef].
  7. T. Zhao, H. Lu, F. Chen, S. Dai, G. Yang, and Z. Chen: J. Cryst. Growth 212 (2000) 451[CrossRef].
  8. Z. Sroubek: Phys. Rev. B 2 (1970) 3170[APS].
  9. G. Binnig, A. Baratoff, H. E. Hoenig, and J. G. Bednorz: Phys. Rev. Lett. 45 (1980) 1352[APS].
  10. Y. Watanabe: Phys. Rev. B 57 (1998) R5563[APS].
  11. D. M. Newns, J. A. Misewich, C. C. Tsuei, A. Gupta, B. A. Scott, and A. Schrott: Appl. Phys. Lett. 73 (1998) 780[AIP Scitation].
  12. H. Hasegawa and T. Nishino: J. Appl. Phys. 69 (1991) 1501[AIP Scitation].
  13. Y. Haruyama, Y. Aiura, H. Bando, H. Suzuki, and Y. Nishihara: Physica B 237 (1997) 380.
  14. T. Shimizu, N. Gotoh, N. Shinozaki, and H. Okushi: Appl. Surf. Sci. 117–118 (1997) 400[CrossRef].
  15. T. Shimizu and H. Okushi: Appl. Phys. Lett. 67 (1995) 1411[AIP Scitation].
  16. C. Lee, J. Yahia, and J. L. Brebner: Phys. Rev. B 3 (1971) 2525[APS].
  17. Y. Cui and R. Wang: Appl. Phys. Lett. 91 (2007) 233513[AIP Scitation].

|TOP|  |Previous Article| |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information