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Effects of Pressure on Piezoelectric and Dielectric Responses of Relaxor Ferroelectric Solid Solution Pb(Mg1/3Nb2/3)O3–PbTiO3 Binary System Ceramics near a Morphotropic Phase Boundary Composition
Naohiko Yasuda,
Koichi Ozawa,
Md. M. Rahaman,
Hidehiro Ohwa,
Yohachi Yamashita1,
Makoto Iwata2, and
Yoshihiro Ishibashi3
Electrical and Electronic Engineering Department, Gifu University, Gifu 501-1193, Japan
1Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
2Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan
3Faculty of Business, Aichi Shukutoku University, Nagakute, Aichi 480-1197, Japan
(Received May 12, 2008; accepted July 2, 2008; published online September 19, 2008)
The piezoelectric and dielectric properties of Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMNT) ceramics with compositions near a morphotropic phase boundary (MPB) were investigated under pressures p up to 700 MPa at 25 °C. The resonance and antiresonance frequency characteristics of impedance and phase in the k31 mode for PMNT (67/33) and (69/31) ceramics were observed under various pressures. The effect of pressure on their responses were clearly observed. The electromechanical coupling coefficient k31 in the k31 mode increases and the electromechanical quality factor Q decreases with increasing p at pressures lower than 100 MPa. The decrease in Q with p is due to the scattering of ultrasonic waves from the domain boundary. The relative permittivity εr increases with increasing p. Such increases in both k and εr with p seem to be related to the increase in topographical domain-wall density associated with monoclinic distortions. At pressures higher than 100 MPa, their electromechanical suppression in PMNT ceramics occurs at each pressure, corresponding to the electromechanical coupling coefficient k. εr increases with pressure-induced electromechanical suppression. The change in εr with such suppression corresponds to k. Such a phenomenon seems to be due to the increase in piezoelectric load based on the increase in complex domain wall density coming from the increase in free energy with pressure.
URL:
http://jjap.jsap.jp/link?JJAP/47/7650/
DOI: 10.1143/JJAP.47.7650
KEYWORDS:electromechanical coupling coefficient, PMNT (67/33) and (69/31) ceramics, hydrostatic pressure effect, piezoelectric constant, permittivity, domain, morphotropic phase boundary
- J. Kuwata, K. Uchino, and S. Nomura:
Jpn. J. Appl. Phys. 21 (1982) 1298[JSAP].
- S.-E. Park and T. R. Shrout: IEEE Trans. Ultrason. Ferroelec. Freq. Control 44 (1997) 1140.
- S. W. Choi, T. R. Shrout, S. J. Jang, and A. S. Bhalla: Ferroelectrics 100 (1989) 29.
- Y. Ishibashi and M. Iwata:
Jpn. J. Appl. Phys. 37 (1998) L985[JSAP].
- Y. Ishibashi and M. Iwata:
Jpn. J. Appl. Phys. 38 (1999) 800[JSAP].
- Y. Ishibashi and M. Iwata:
Jpn. J. Appl. Phys. 38 (1999) 1454[JSAP].
- N. Setter: Piezoelectric Materials in Devices (Ceramics Laboratory EPFL Swiss Federal Institute of Technology, Lausanne, 2002) Chaps. 1 and 20.
- R. Y. Nishi and R. F. Brown:
J. Acoust. Soc. Am. 36 (1964) 1292[AIP Scitation].
- R. V. Wilhelm and M. G. McLaren: Ceram. Bull. 54 (1975) 714.
- N. Yasuda, Y. Itoh, H. Ohwa, M. Matushita, Y. Yamashita, M. Iwata, and Y. Ishibashi:
Jpn. J. Appl. Phys. 43 (2004) 6675[JSAP].
- N. Yasuda, Y. Itoh, H. Ohwa, M. Matushita, Y. Yamashita, M. Iwata, and Y. Ishibashi: J. Korean Phys. Soc. 46 (2005) 124.
- N. Yasuda, K. Fujita, H. Ohwa, M. Matushita, Y. Yamashita, M. Iwata, and Y. Ishibashi:
Jpn. J. Appl. Phys. 45 (2006) 7413[JSAP].
- N. Yasuda, Md. M. Rahman, H. Ohwa, M. Matushita, Y. Yamashita, M. Iwata, H. Terauchi, and Y. Ishibashi:
Appl. Phys. Lett. 89 (2006) 192903[AIP Scitation].
- N. Yasuda, S. Suzuki, Md. M. Rahman, H. Ohwa, M. Matushita, Y. Yamashita, M. Iwata, H. Terauchi, and Y. Ishibashi:
J. Appl. Phys. 103 (2008) 064509[AIP Scitation].
- H. H. A. Krueger and D. Berlincourt:
J. Acoust. Soc. Am. 33 (1961) 1339[AIP Scitation].
- D. Viehland and J. Powers:
J. Appl. Phys. 89 (2001) 1820[AIP Scitation].
- D. Viehland and J. Powers:
Appl. Phys. Lett. 78 (2001) 3112[AIP Scitation].
- Z. Wu and R. E. Cohen:
Phys. Rev. Lett. 95 (2005) 037601[APS].
- M. Ahart, M. Somayazulu, R. E. Cohen, P. Ganesh, P. Dera, H.-K. Mao, R. J. Hemley, Y. Ren, P. Liermann, and Z. Wu:
Nature 451 (2008) 545[CrossRef].
- J. Rouquette, J. Haines, V. Bornand, M. Pintard, Ph. Papet, C. Bousquet, L. Konczewicz, F. A. Gorelli, and S. Hull:
Phys. Rev. B 70 (2004) 014108[APS].
- R. Guo, L. E. Cross, S.-E. Park, B. Noheda, D. E. Cox, and G. Shirane:
Phys. Rev. Lett. 84 (2000) 5423[APS].
- W. Cao:
Nat. Mater. 4 (2005) 727[CrossRef].
- J. Y. Li, R. C. Rogan, E. Ustundag, and K. Bhattacharya:
Nat. Mater. 4 (2005) 776[CrossRef].
- J. Y. Li and D. Liu: J. Mech. Phys. Solids 52 (2004) 1719.
- H. Takahashi, Y. Numamoto, J. Tani, and S. Tsurekawa:
Jpn. J. Appl. Phys. 45 (2006) 7405[JSAP].
- T. Karaki, Y. Kang, T. Miyamoto, and M. Adachi:
Jpn. J. Appl. Phys. 46 (2007) L97[JSAP].
- S. Wada, K. Yako, H. Kakemoto, T. Tsurumi, and T. Kiguchi:
J. Appl. Phys. 98 (2005) 014109[AIP Scitation].
- S. L. Swartz and T. R. Shrout: Mater. Res. Bull. 17 (1982) 1245.
- N. Yasuda, M. Okamoto, H. Shimizu, S. Fujimoto, K. Yoshino, and Y. Inuishi:
Phys. Rev. B 20 (1979) 2755[APS].
- M. Iwata, K. Katsuraya, I. Suzuki, M. Maeda, N. Yasuda, and Y. Ishibashi:
Jpn. J. Appl. Phys. 42 (2003) 6201[JSAP].
- H. Yu and C. A. Randall:
J. Appl. Phys. 86 (1999) 5733[AIP Scitation].
- H. Ouchi, K. Nagano, and S. Hayakawa:
J. Am. Ceram. Soc. 48 (1965) 630[CrossRef].
- H. Ouchi, M. Nishida, and S. Hayakawa:
J. Am. Ceram. Soc. 49 (1966) 577[CrossRef].
- H. Ouchi:
J. Am. Ceram. Soc. 51 (1968) 169[CrossRef].
- R. Zhang, W. Jiang, and W. Cao:
Appl. Phys. Lett. 87 (2005) 182903[AIP Scitation].
- J. F. Nye: Physical Properties of Crystal (Oxford University Press, Oxford, U.K., 1957) Chap. 8.
- F. Cerdeira, W. B. Holzapfel, and D. Bauerle:
Phys. Rev. B 11 (1975) 1188[APS].