Jpn. J. Appl. Phys. 47 (2008) pp. 853-856  |Previous Article| |Next Article|  |Table of Contents|
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Electrical Properties of High-κ Praseodymium Oxide Polycrystalline Silicon Thin-Film Transistors with Nitrogen Implantation

Chih-Kang Deng, Hong-Ren Chang, and Bi-Shiou Chiou

(Received October 28, 2007; accepted November 25, 2007; published online February 15, 2008)

This paper demonstrates the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with high-κ praseodymium oxide (Pr₂O₃) gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Nitrogen atoms with various dosages are implanted into amorphous silicon (α-Si) film to passivate the grain boundary trap states during solid-phase crystallization (SPC) annealing. From experimental results, the electrical characteristics of the Pr₂O₃ poly-Si TFT implanted with the nitrogen dosage of 5×10¹² cm^-2 could be greatly improved. In addition, a better hot-harrier immunity of high-κ Pr₂O₃ poly-Si TFT could be also obtained.

URL: http://jjap.jsap.jp/link?JJAP/47/853/
DOI: 10.1143/JJAP.47.853
KEYWORDS:polycrystalline silicon (poly-Si) thin-film transistor (TFT), praseodymium oxide (Pr₂O₃), nitrogen implantation, solid-phase crystallization (SPC)

References | Citing Article (1)

1. H. Oshima and S. Morozumi: IEDM Tech. Dig., 1989, p. 157.
2. T. Uchida: IEDM Tech. Dig., 1991, p.  5.
3. T. Suzuki: J. Appl. Phys. 99 (2006) 111101[AIP Scitation].
4. T. Aoyama, G. Kawachi, N. Konishi, T. Suzuki, Y. Okajima, and K. Miyata: J. Electrochem. Soc. 136 (1989) 1169.
5. A. Nakamura, F. Emoto, E. Fujii, A. Yamamoto, Y. Uemoto, K. Senda, and G. Kano: J. Appl. Phys. 66 (1989) 4248[AIP Scitation].
6. Z. Jin, H. S. Kwok, and M. Wong: IEEE Electron Device Lett. 19 (1998) 502[CrossRef].
7. B. F. Hung, K. C. Chiang, C. C. Huang, A. Chin, and S. P. McAlister: IEEE Electron Device Lett. 26 (2005) 384[CrossRef].
8. C.-P. Lin, B.-Y. Tsui, M.-J. Yang, R.-H. Huang, and C.-H. Chien: IEEE Electron Device Lett. 27 (2006) 360[CrossRef].
9. K. R. Olasupo and M. K. Hatalis: IEEE Trans. Electron Devices 43 (1996) 1218[CrossRef].
10. G. K. Guist and T. W. Sigmon: IEEE Trans. Electron Devices 45 (1998) 925[CrossRef].
11. I. W. Wu, W. B. Jackson, T. Y. Huang, A. G. Lewis, and A. Chiang: IEEE Electron Device Lett. 11 (1990) 167[CrossRef].
12. I.-W. Wu, T.-Y. Huang, W. B. Jackson, A. G. Lewis, and A. Chiang: IEEE Electron Device Lett. 12 (1991) 181[CrossRef].
13. Y.-S. Kim, K.-Y. Choi, S.-K. Lee, B.-H. Min, and M.-K. Han: Jpn. J. Appl. Phys. 33 (1994) 649[JSAP].
14. M. Hack, A. G. Lewis, and I.-W. Wu: IEEE Trans. Electron Devices 40 (1993) 890[CrossRef].
15. M. Kimura, T. Yasuhara, K. Harada, D. Abe, S. Inoue, and T. Shimoda: J. Soc. Inf. Disp. 13 (2005) 1027.
16. F. V. Farmakis, J. Brini, G. Kamarions, and C. A. Dimitriadis: IEEE Electron Device Lett. 22 (2001) 74[CrossRef].
17. L. Pauling: The Nature of the Chemical Bond (Cornell University Press, Ithaca, NY, 1960) 3rd ed.