Jpn. J. Appl. Phys. 47 (2008) pp. 8726-8729 |Previous Article| |Next Article| |Table of Contents|
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Growth and Characterization of Vanadium-Doped ZnSe by Metalorganic Vapor Phase Epitaxy
Masahiro Tahashi,
Zunyi Wu,
Hideo Goto, and
Toshiyuki Ido
Department of Electrical Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai, Aichi 487-8501, Japan
(Received August 18, 2008; revised August 27, 2008; accepted September 6, 2008; published online December 19, 2008)
Vanadium-doped ZnSe was epitaxially grown on a (100) GaAs substrate by metalorganic vapor phase epitaxy under atmospheric pressure. The effects of the molar supply ratio of dimethylzinc to dimethylselenide on crystallinity were investigated to determine the optimum vanadium doping conditions. In the present study, as dopant sources of vanadium, vanadocene and triethoxyvanadyl were used. When triethoxyvanadyl was used as a dopant source, the crystal growth condition of vanadium-doped ZnSe changed from epitaxial growth to polycrystal growth at a molar supply ratio between 1.2 and 1.5. The magnetic property of vanadium-doped ZnSe fabricated at a molar supply ratio of 1.2 was measured using a superconducting quantum interface device at room temperature.
URL:
http://jjap.jsap.jp/link?JJAP/47/8726/
DOI: 10.1143/JJAP.47.8726
KEYWORDS:MOVPE, ZnSe, vanadium
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