Jpn. J. Appl. Phys. 47 (2008) pp. 879-884 |Previous Article| |Next Article| |Table of Contents|
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Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
1Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
2NEC Electronics Corporation, 1120 Shimokuzawa, Sagaminara, Kanagawa 229-1198, Japan
3Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
(Received May 24, 2007; accepted November 19, 2007; published online February 15, 2008)
We have demonstrated stacked HfSiON gate dielectrics with a low-Hf-concentration [Hf/(Hf+Si)=6%] cap (LHC) layer. For fabricating the LHC layer, diethylsilane is more effective due to its decomposition characteristics being better than those of conventional amine-based precursors. The stacked structures exhibit improved mobility, the suppression of Vth shift, superior negative bias temperature instability (NBTI), and positive bias temperature instability (PBTI) reliability for complementary metal–oxide–semiconductor field-effect transistors (CMOSFETs), while maintaining low gate leakage currents. The mobility improvement is due to the superior control of nitrogen atoms, and the superior threshold voltage control and long-term reliability of the film are mainly due to the suppression of the positive oxygen vacancy (VO2+) formation related to carrier traps. These results were supported by the results of first-principles calculation.
KEYWORDS:HfSiON, diethylsilane, PBTI, NBTI, oxygen vacancies
- G. D. Wilk, R. M. Wallace, and J. M. Anthony:
J. Appl. Phys. 89 (2001) 5243[AIP Scitation].
- A. L. Rotondaro, M. R. Visokay, J. J. Chambers, A. Shanware, R. Khanmankar, H. Bu, R. T. Laaksonen, L. Tsung, M. Douglas, R. Kuan, M. J. Bejan, T. Grider, J. McPhreson, and L. Colombo: Symp. VLSI Technology Dig. Tech. Pap., 2002, p. 148.
- K. Sekine, S. Inumiya, M. Sato, A. Kaneko, K. Eguchi, and Y. Tsunashima: IEDM Tech. Dig., 2003, p. 103.
- M. Koyama, A. Kaneko, T. Ino, M. Koike, Y. Kamata, R. Iijima, Y. Kamimuta, A. Takashima, M. Suzuki, C. Hongo, S. Inumiya, M. Takayanagi, and A. Nishiyama: IEDM Tech. Dig., 2002, p. 849.
- H. N. Alshareef, H. R. Harris, H. C. Wen, C. S. Park, C. Huffman, K. Choi, H. F. Luan, P. Majhi, B. H. Lee, R. Jammy, D. J. Lichtenwalner, J. S. Jur, and A. I. Kingon: Symp. VLSI Technology Dig. Tech. Pap., 2006, p. 10.
- K. L. Lee, M. M. Frank, V. Paruchuri, E. Cartier, B. Linder, N. Bojarczuk, X. Wang, J. Rubino, M. Steen, P. Kozlowski, J. Newbury, E. Sikorski, P. Flaitz, M. Gribelyuk, P. Jamison, G. Singco, V. Narayanan, S. Zafar, S. Guha, P. Oldiges, R. Jammy, and M. Ieong: Symp. VLSI Technology Dig. Tech. Pap., 2006, p. 203.
- A. Kaneko, S. Inumiya, K. Sekine, M. Sato, Y. Kamimuta, K. Eguchi, and Y. Tsunashima: Ext. Abstr. Solid State Device and Materials, 2003, p. 742.
- R. Iijima, M. Takayanagi, T. Yamaguchi, M. Koyama, and A. Nishiyama: IEDM Tech. Dig., 2005, p. 433.
- C. Hobbs, L. Fonseca, V. Dhandapani, S. Samavedam, B. Taylor, J. Grant, L. Dip, D. Triyoso, R. Hegde, D. Gilmer, R. Garcia, D. Roan, L. Lovejoy, R. Rai, L. Hebert, H. Tseng, B. White, and P. Tobin: Symp. VLSI Technology Dig. Tech. Pap., 2003, p. 9.
- K. Shiraishi, K. Yamada, K. Torii, Y. Akasaka, K. Nakajima, M. Kohno, T. Chikyo, H. Kitajima, and T. Arikado: Symp. VLSI Technology Dig. Tech. Pap., 2004, p. 108.
- K. Torii, K. Shiraishi, S. Miyazaki, K. Yamabe, M. Boero, T. Chikyow, K. Yamada, H. Kitajima, and T. Arikado: IEDM Tech. Dig., 2004, p. 129.
- C. Shen, M. F. Li, X. P. Wang, H. Y. Yu, Y. P. Feng, A. T.-L. Lim, Y. C. Yeo, D. S. H. Chan, and D. L. Kwong: IEDM Tech. Dig., 2004, p. 733.