Jpn. J. Appl. Phys. 47 (2008) pp. 879-884  |Previous Article| |Next Article|  |Table of Contents|
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Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane

Motoyuki Sato, Yasushi Nakasaki¹, Koji Watanabe², Tomonori Aoyama, Eiji Hasegawa², Masato Koyama¹, Katsuyuki Sekine, Kazuhiro Eguchi, Masaki Saito³, and Yoshitaka Tsunashima

(Received May 24, 2007; accepted November 19, 2007; published online February 15, 2008)

We have demonstrated stacked HfSiON gate dielectrics with a low-Hf-concentration [Hf/(Hf+Si)=6%] cap (LHC) layer. For fabricating the LHC layer, diethylsilane is more effective due to its decomposition characteristics being better than those of conventional amine-based precursors. The stacked structures exhibit improved mobility, the suppression of V_th shift, superior negative bias temperature instability (NBTI), and positive bias temperature instability (PBTI) reliability for complementary metal–oxide–semiconductor field-effect transistors (CMOSFETs), while maintaining low gate leakage currents. The mobility improvement is due to the superior control of nitrogen atoms, and the superior threshold voltage control and long-term reliability of the film are mainly due to the suppression of the positive oxygen vacancy (V_O²⁺) formation related to carrier traps. These results were supported by the results of first-principles calculation.

URL: http://jjap.jsap.jp/link?JJAP/47/879/
DOI: 10.1143/JJAP.47.879
KEYWORDS:HfSiON, diethylsilane, PBTI, NBTI, oxygen vacancies

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