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Analytical Study on a Single Electron Device with Two Islands Connected to One Gate Electrode
Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
(Received March 21, 2008; accepted August 23, 2008; published online December 19, 2008)
We have studied a double-dot single electron device that includes three tunnel junctions connecting a source, two islands and a drain, and a gate electrode capacitively connected to the two islands. Analytical solutions for voltage distribution and Coulomb blockade conditions were derived for the double-dot device with a symmetrical equivalent circuit by solving equations algebraically. With the help of derived formulas, stability diagrams for the device were drawn and the device operation was investigated in detail. Large and small rhombic stability diagrams are arranged alternately along the Vg axis. Large rhombic diagrams change to hexagonal shape, depending on a ratio of capacitances. A single electron can transfer from the source to the drain through the islands, that is, the device operates as a single electron transistor. The stability diagrams suggested that periodic double peaks of the drain current would appear. We also proved that this device cannot operate as a single electron turnstile.
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