Jpn. J. Appl. Phys. 47 (2008) pp. 933-935 |Previous Article| |Next Article| |Table of Contents|
|Full Text PDF (319K)| |Buy This Article|
Fabrication of High-Intensity Light-Emitting Diodes Using Nanostructures by Ultraviolet Nanoimprint Lithography and Electrodeposition
Hiroshi Ono,
Yoshinobu Ono1,
Kenji Kasahara1,
Jun Mizuno2, and
Shuichi Shoji
Major in Nano-science and Nano-engineering, School of Science and Technology, Waseda University, Tokyo 169-8555, Japan
1Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd., Tsukuba, Ibaraki 300-3294, Japan
2Nanotechnology Research Laboratory, Waseda University, Tokyo 162-0041, Japan
(Received December 28, 2006; revised September 18, 2007; accepted November 1, 2007; published online February 15, 2008)
Antireflection nanostructures for GaN light-emitting diodes (LEDs) were fabricated by reactive ion etching (RIE) using Ni as an etching mask. The Ni mask was formed by electrodeposition in combination with ultraviolet nanoimprint lithography (UV-NIL). The antireflection nanostructures of 600 nm in depth, 300 nm in diameter, and 500 nm in pitch were fabricated on a GaN substrate. The radiant intensity of the LEDs was increased 1.5 times compared to that of a conventional LED. Since this method enables the fabrication of wafer-level GaN nanostructures with a low cost process, it is applicable to the fabrication of photonic crystals.
URL:
http://jjap.jsap.jp/link?JJAP/47/933/
DOI: 10.1143/JJAP.47.933
- T. N. Oder, K. H. Kim, J. Y. Lin, and H. X. Jiang:
Appl. Phys. Lett. 84 (2004) 466[AIP Scitation].
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura:
Appl. Phys. Lett. 84 (2004) 855[AIP Scitation].
- J. J. Wierer, M. R. Krames, J. E. Epler, N. F. Gardner, and M. G. Craford:
Appl. Phys. Lett. 84 (2004) 3885[AIP Scitation].
- K. Orita, S. Tamura, T. Takizawa, T. Ueda, M. Yuri, S. Takigawa, and D. Ueda:
Jpn. J. Appl. Phys. 43 (2004) 5809[JSAP].
- H.-W. Huang, C. C. Kao, J. T. Chu, H. C. Kuo, S. C. Wang, and C. C. Yu:
IEEE Photonics Technol. Lett. 17 (2005) 983[CrossRef].
- S. Y. Chou, P. R. Krauss, and P. J. Renstrom:
Appl. Phys. Lett. 67 (1995) 3114[AIP Scitation].
- J. Haisma, M. Verheijen, K. van den Heuvel, and J. van den Berg:
J. Vac. Sci. Technol. B 14 (1996) 4124[AIP Scitation].
- Q. Xia, C. Keimel, H. Ge, Z. Yu, W. Wu, and S. Y. Chou:
Appl. Phys. Lett. 83 (2003) 4417[AIP Scitation].
- A. A. Bergh, M. Hill, R. H. Saul, and S. Plains: U.S. Patent No. 3,739,217 (1973).
- A. Fujimoto and K. Asakawa: J. Photopolym. Sci. Technol. 20 (2007) 499.
