Jpn. J. Appl. Phys. 48 (2009) 052102 (7 pages)  |Previous Article| |Next Article|  |Table of Contents|
|Full Text PDF (308K)| |Buy This Article|

Failure Analysis of InP-Based Edge-Emitting Buried Heterostructure Laser Diodes Degraded by Forward-Biased Electrostatic Discharge Tests

Hiroyuki Ichikawa, Shinji Matsukawa¹, Kotaro Hamada¹, Akira Yamaguchi², and Takashi Nakabayashi

(Received October 24, 2008; accepted January 18, 2009; published online May 20, 2009)

We investigated the forward-biased electrostatic discharge (ESD)-induced degradation that is one of the important reliability issues for InP-based edge-emitting buried heterostructure laser diodes. Although it has been suggested that the degradation mechanism is related to optical damage, the detailed mechanism has not been established. Thus, we carried out failure analysis. Two elliptically shaped degraded regions, which were introduced by the first and second ESD pulses, were observed in an active layer. A peculiar chain-like degradation was created along the longitudinal axis. This degradation was caused by light absorption at an active layer. We also investigated the relationship between forward-biased ESD tolerance and an aging test. We observed a decrease in tolerance as a result of the aging test for laser diodes with cleaved facets. This decrease was sufficiently suppressed by facet coating. We identified two reasons why facet coating is important. One is to obtain sufficient ESD tolerance under initial conditions, and the other is to suppress the decrease in ESD tolerance during aging.

URL: http://jjap.jsap.jp/link?JJAP/48/052102/
DOI: 10.1143/JJAP.48.052102

References | Citing Articles (2)

1. R. L. Thornton, D. F. Welch, R. D. Burnham, T. L. Paoli, and P. S. Cross: Appl. Phys. Lett. 49 (1986) 1572[AIP Scitation].
2. A. Moser, E.-E. Latta, and D. J. Webb: Appl. Phys. Lett. 55 (1989) 1152[AIP Scitation].
3. L. W. Tu, E. F. Schubert, M. Hong, and G. J. Zydzik: J. Appl. Phys. 80 (1996) 6448[AIP Scitation].
4. H. Imai, M. Morimoto, H. Sudo, T. Fujiwara, and M. Takusagawa: Appl. Phys. Lett. 33 (1978) 1011[AIP Scitation].
5. M. Fukuda, M. Okayasu, J. Temmyo, and J. Nakano: IEEE J. Quantum Electron. 30 (1994) 471[CrossRef].
6. H. Ichikawa, K. Inoshita, and T. Baba: Appl. Phys. Lett. 78 (2001) 2119[AIP Scitation].
7. M. Fukuda, K. Takahei, G. Iwane, and T. Ikegami: Appl. Phys. Lett. 41 (1982) 18[AIP Scitation].
8. M. Morimoto, H. Imai, K. Hori, and M. Takusagawa: Appl. Phys. Lett. 37 (1980) 1082[AIP Scitation].
9. J. Wallon, G. Terol, B. Bauduin, and P. Devoldere: Mater. Sci. Eng. B 28 (1994) 314.
10. F. Magistrali, D. Sala, G. Salmini, M. Vanzi, F. Fantini, M. Giansante, and L. Zazzetti: Qual. Reliab. Eng. Int. 8 (1992) 287.
11. Y. Twu, L. S. Cheng, S. N. G. Chu, F. R. Nash, K. W. Wang, and P. Parayanthal: J. Appl. Phys. 74 (1993) 1510[AIP Scitation].
12. J. S. Huang, T. Olson, and E. Isip: IEEE Trans. Device Mater. Reliab. 7 (2007) 453.
13. L. F. DeChiaro and C. J. Sandroff: IEEE Trans. Electron Devices 39 (1992) 561[CrossRef].
14. H. Ichikawa, M. Ito, C. Fukuda, K. Hamada, A. Yamaguchi, and T. Nakabayashi: Denki Gakkai Ronbunshi C 128 (2008) 732 [in Japanese].
15. O. Ueda, H. Imai, A. Yamaguchi, S. Komiya, I. Umebu, and T. Kotani: J. Appl. Phys. 55 (1984) 665[AIP Scitation].
16. H. Ichikawa, C. Fukuda, K. Hamada, and T. Nakabayashi: Jpn. J. Appl. Phys. 47 (2008) 7890[JSAP].
17. H. Ichikawa, K. Sasaki, K. Hamada, and A. Yamaguchi: Proc. Int. Symp. Testing and Failure Analysis, 2008, p. 265.
18. F. R. Gfeller and D. J. Webb: J. Appl. Phys. 68 (1990) 14[AIP Scitation].
19. H. Ichikawa, M. Ito, K. Hamada, A. Yamaguchi, and T. Nakabayashi: Jpn. J. Appl. Phys. 47 (2008) 7886[JSAP].
20. J. Hashimoto, N. Ikoma, M. Murata, J. Fukui, T. Nomaguchi, and T. Katsuyama: Jpn. J. Appl. Phys. 39 (2000) 2761[JSAP].