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Jpn. J. Appl. Phys. 48 (2009) 055503 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Reduction of Defects in SiOx Vapor Permeation Barriers on Polymer Substrates by Introducing a Sputtered Interlayer

Jungheum Yun, Sunghun Lee, Yujeong Jeong, Hong-Rim Lee1, Jung-Dae Kwon, and Gun-Hwan Lee

Department of Surface Technology, Korean Institute of Materials Science, 531 Changwondero, Changwon 641-831, Korea
1Center for Instrumental Analysis, Kyungnam University, 449 Wolyoung-dong, Masan 631-701, Korea

(Received November 14, 2008; accepted February 6, 2009; published online May 20, 2009)

This paper investigated the water-vapor permeability of silicon oxide (SiOx) barriers grown on poly(ethylene terephthalate) (PET) substrates using plasma-enhanced chemical vapor deposition (PECVD). The water-vapor transmission rate (WVTR) of granular-type SiOx barriers is dependent upon the density of microscopic pinholes in the barriers. A two-step hybrid process, consisting of (i) a sputtering stage for 10-nm-thick Al2O3 interlayer growth and (ii) a subsequent PECVD stage for thicker SiOx film growth, was proposed in this study. Granules and pinholes in SiOx barriers were simultaneously eliminated by introducing an Al2O3 interlayer on the PET surface prior to the SiOx PECVD process. Plasma-induced reconstruction of PET surfaces was prevented by applying a reactive sputtering process to grow the Al2O3 interlayer. High-quality barriers were developed from SiOx growth on the sputtered interlayer. Low WVTR values in the range of 10-3 g m-2 d-1 were recorded in tests using a MOCON instrument. The WVTR was two orders of magnitude smaller than that of conventional SiOx barriers directly grown on PET substrates without the Al2O3 interlayer.

URL: http://jjap.jsap.jp/link?JJAP/48/055503/
DOI: 10.1143/JJAP.48.055503


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References | Citing Articles (4)

  1. M. S. Weaver, L. A. Michalski, K. Rajan, M. A. Rothman, J. A. Silvernail, J. J. Brown, P. E. Burrows, G. L. Graff, M. E. Gross, P. M. Martin, M. Hall, E. Mast, C. Bonham, W. Bennett, and M. Zumhoff: Appl. Phys. Lett. 81 (2002) 2929[AIP Scitation].
  2. J. S. Lewis and M. S. Weaver: IEEE J. Sel. Top. Quantum Electron. 10 (2004) 45.
  3. M. D. Groner, S. M. George, R. S. McLean, and P. F. Carcia: Appl. Phys. Lett. 88 (2006) 051907[AIP Scitation].
  4. P. F. Carcia, R. S. McLean, M. H. Reilly, M. D. Groner, and S. M. George: Appl. Phys. Lett. 89 (2006) 031915[AIP Scitation].
  5. E. Langereis, M. Creatore, S. B. S. Heil, M. C. M. van de Sanden, and W. M. M. Kessels: Appl. Phys. Lett. 89 (2006) 081915[AIP Scitation].
  6. Y. G. Tropsha and N. G. Harvey: J. Phys. Chem. B 101 (1997) 2259[CrossRef].
  7. A. G. Erlat, R. J. Spontak, R. P. Clarke, T. C. Robinson, P. D. Haaland, Y. Tropsha, N. G. Harvey, and E. A. Vogler: J. Phys. Chem. B 103 (1999) 6047[CrossRef].
  8. Y. Leterrier: Prog. Mater. Sci. 48 (2003) 1.
  9. D.-S. Wuu, T.-N. Chen, C.-C. Wu, C.-C. Chiang, Y.-P. Chen, R.-H. Horng, and F.-S. Juang: Chem. Vapor Deposition 12 (2006) 220.
  10. D. S. Wavhal, J. Zhang, M. L. Steen, and E. R. Fisher: Plasma Process. Polym. 3 (2006) 276.
  11. N. Inagaki, V. Cech, K. Narushima, and Y. Takechi: J. Appl. Polym. Sci. 104 (2007) 915.
  12. A. G. Erlat, B. M. Henry, C. R. M. Grovenor, A. G. D. Briggs, R. J. Chater, and Y. Tsukahara: J. Phys. Chem. B 108 (2004) 883[CrossRef].
  13. T. N. Chen, D. S. Wuu, C. C. Wu, C. C. Chiang, Y. P. Chen, and R. H. Horng: Plasma Process. Polym. 4 (2007) 180.
  14. C. Bichler, H. C. Langowski, U. Moosheimer, and B. Seifert: J. Adhes. Sci. Technol. 11 (1997) 233.
  15. R. Lamendola, P. Favia, F. Palumbo, and R. d'Agostino: Eur. Phys. J.: Appl. Phys. 4 (1998) 65.
  16. M. Creatore, F. Palumbo, and R. d'Agostino: Pure Appl. Chem. 74 (2002) 407.
  17. J. H. Lee, D. S. Kim, and Y. H. Lee: J. Electrochem. Soc. 143 (1996) 1443.
  18. M. Walker, F. Meermann, J. Schneider, K. Bazzoun, J. Feichtinger, A. Schulz, J. Krüger, and U. Schumacher: Surf. Coat. Technol. 200 (2005) 947.
  19. R. R. Mallik, P. N. Henriksen, T. Butler, W. J. Kulnis, and T. J. Confer: J. Vac. Sci. Technol. A 10 (1992) 2412[AIP Scitation].
  20. R. W. Philips, T. Markantes, and C. LeGallee: Proc. 36th SVC Annu. Technol. Conf., 1993, p. 293.
  21. C. P. Barker, K.-H. Kochem, K. M. Revell, R. S. A. Kelly, and J. P. S. Badyal: Thin Solid Films 259 (1995) 46[CrossRef].
  22. G. Garcia-Ayuso, L. Vazquez, and J. M. Martinez-Duart: Surf. Coat. Technol. 80 (1996) 203.
  23. R. Thyen, A. Weber, and C.-P. Klages: Surf. Coat. Technol. 97 (1997) 426.
  24. R. D. Boyd, A. M. Kenwright, J. P. S. Badyal, and D. Briggs: Macromolecules 30 (1997) 5429.
  25. B. D. Beake, J. S. G. Ling, and G. J. Leggett: J. Mater. Chem. 8 (1998) 1735.
  26. O. D. Greenwood, J. Hopkins, and J. P. S. Badyal: Macromolecules 30 (1997) 1091.
  27. H. Kupfer and G. K. Wolf: Nucl. Instrum. Methods Phys. Res., Sect. B 166–167 (2000) 722.
  28. A. Bellel, S. Sahli, Z. Ziari, P. Raynaud, Y. Segui, and D. Escaich: Surf. Coat. Technol. 201 (2006) 129.
  29. A. S. da Silva Sobrinho, J. Chasle, G. Dennler, and M. R. Wertheimer: Plasma Polym. 3 (1998) 231.
  30. F. D. Egitto, V. Vukanovic, and G. N. Taylor: in Plasma Deposition Treatment and Etching of Polymers, ed. R. d'Agostino (Academic Press, Boston, MA, 1990) Chap. 5.
  31. H. Chatham: Surf. Coat. Technol. 78 (1996) 1.
  32. A. S. da Silva Sobrinho, M. Latréche, G. Czeremuszkin, J. E. Klemberg-Sapieha, and M. R. Wertheimer: J. Vac. Sci. Technol. A 16 (1998) 3190[AIP Scitation].
  33. J. T. Felts: Proc. 33rd SVC Annu. Tech. Conf., 1990, p. 184.
  34. A. S. da Silva Sobrinho, N. Schühler, J. E. Klemberg-Sapieha, M. R. Wertheimer, M. Andrews, and S. C. Gujrathi: J. Vac. Sci. Technol. A 16 (1998) 2021[AIP Scitation].
  35. G. Czermuszkin, M. Latréal, and M. R. Wertheimer: Proc. 44th SVC Annu. Tech. Conf., 2006, p. 178.
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