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Jpn. J. Appl. Phys. 48 (2009) 05DF02 (5 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Physical and Memory Characteristics of Atomic-Layer-Deposited High-κ Hafnium–Aluminum-Oxide Nanocrystal Capacitors with Iridium-Oxide Metal Gate

Atanu Das, Siddheswar Maikap, Wei-Chih Li1, Liann-Be Chang, and Jer-Ren Yang1

Nano Laboratory, Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan
1Department of Material Science Engineering, National Taiwan University, Taipei 106, Taiwan

(Received November 6, 2008; accepted February 23, 2009; published online May 20, 2009)

The physical and memory characteristics of high-κ hafnium–aluminum-oxide (HfAlO) nanocrystals in an n-Si/SiO2/HfO2/Al2O3/iridium-oxide (IrOx) structure have been investigated. The high-κ HfAlO nanocrystal in the SiO2/HfO2/Al2O3 layers is formed owing to the diffusion of Al2O3 and HfO2 films after high-temperature annealing at 900 °C. High-κ HfAlO nanocrystals with a small diameter of 5 nm and a high density of 1.7 ×1012 cm-2 have been confirmed by high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Owing to the formation of high-κ HfAlO nanocrystals, a large hysteresis memory window of ΔV≈4.4 V at a sweeping gate voltage of ±10 V is observed compared with that of as-deposited memory capacitor. A hysteresis memory window of ΔV≈1.4 V with a small sweeping gate voltage of ±7 V is also observed. Good endurance of 104 cycles with a large memory window of ΔV≈3.6 V is obtained. A significant memory window of ΔV≈1.3 V is observed after a retention time of 5×104 s, owing to the charge confinement in the high-κ HfAlO nanocrystals.

URL: http://jjap.jsap.jp/link?JJAP/48/05DF02/
DOI: 10.1143/JJAP.48.05DF02


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