Jpn. J. Appl. Phys. 48 (2009) 06FD11 (3 pages)  |Previous Article| |Next Article|  |Table of Contents|
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Charge Trapping Characteristics of Variable Oxide Thickness Tunnel Barrier with SiO₂/HfO₂ or Al₂O₃/HfO₂ Stacks for Nonvolatile Memories

Kwan-Su Kim, Myung-Ho Jung, Goon-Ho Park, Jongwan Jung¹, and Won-Ju Cho

(Received November 27, 2008; accepted March 17, 2009; published online June 22, 2009)

Charge trapping characteristics of asymmetrical tunnel barriers consisting of different dielectric materials were investigated for application of nonvolatile memory devices. A thin HfO₂ layer stacked on ultrathin SiO₂ layer (SiO₂/HfO₂ tunnel barrier) revealed higher current sensitivity to applied gate voltage than the conventional single SiO₂ tunnel barrier. On the other hand, the electron trapping of the tunnel barriers increased with the thickness of HfO₂ layer. Thus, a thin HfO₂ layer is promising for the engineered tunnel barriers, while a thick HfO₂ layer is appropriate for charge trapping layers for high-integrated nonvolatile memories. Meanwhile, an ultrathin Al₂O₃/HfO₂ tunnel barrier also revealed good electrical characteristics and is suitable for low temperature fabrication process.

URL: http://jjap.jsap.jp/link?JJAP/48/06FD11/
DOI: 10.1143/JJAP.48.06FD11

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